High Current PNP Bipolar Transistor Guangdong Hottech BC869-25 with SOT-89 Package and Molded Plastic Case

Key Attributes
Model Number: BC869-25
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
40MHz
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
20V
Mfr. Part #:
BC869-25
Package:
SOT-89
Product Description

BC869 PNP Bipolar Transistor

The BC869 is a PNP bipolar transistor designed for surface mount applications. It offers high current and low voltage capabilities, making it suitable for various electronic circuits. This device is complementary to the BC868.

Product Attributes

  • Brand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
  • Origin: China
  • Package: SOT-89
  • Case Material: Molded Plastic
  • UL Flammability Classification: 94V-0

Technical Specifications

ParameterSymbolValueUnitConditions
Collector-Base VoltageVCBO-32V
Collector-Emitter VoltageVCEO-20V
Emitter-Base VoltageVEBO-5V
Collector CurrentIC-1A
Collector Power DissipationPC500mW
Junction TemperatureTJ150C
Storage TemperatureTSTG-55 ~+150C
Collector-base breakdown voltageV(BR)CBO-32VIC=-100uAIE=0
Collector-emitter breakdown voltageV(BR)CEO-20VIC=-1mAIB=0
Emitter-base breakdown voltageV(BR)EBO-5VIE=-100uAIC=0
Collector cut-off currentICBO-0.1uAVCB=-25V, IE=0
Emitter cut-off currentIEBO-0.1uAVEB=-5V, IC=0
DC current gain (hFE1)hFE150VCE=-10V, IC=-5mA
DC current gain (hFE2)hFE2100375VCE=-1V, IC=-0.5A
DC current gain (hFE3)hFE360VCE=-1V, IC=-1A
Collector-emitter saturation voltageVCE(sat)-0.5VIC=-1AIB=-0.1A
Base-emitter voltageVBE-1VVCE=-1V, IC=-1A
Base-emitter voltageVBE-0.62VVCE=-10V, IC=-5mA
Transition frequencyfT40MHzVCE=-5V,IC=-10mA,f=100MHz

2507111630_Guangdong-Hottech-BC869-25_C49238164.pdf

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