NPN transistor HL Haolin Elec 2SD667 B for in low frequency power amplifier and electronic applications

Key Attributes
Model Number: 2SD667 B
Product Custom Attributes
Current - Collector Cutoff:
10uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
900mW
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
2SD667 B
Package:
SOT-89
Product Description

Product Overview

The 2SD667 B is an NPN transistor designed for low-frequency power amplifier applications. It serves as a complementary pair with the 2SB647, offering versatile integration in electronic circuits.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Plastic-Encapsulate Transistors
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=10A,IE=0120V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA,IB=080V
Emitter-base breakdown voltageV(BR)EBOIE=10A,IC=05V
Collector cut-off currentICBOVCB=100V,IE=010A
Emitter cut-off currentIEBOVEB=4V,IC=010A
DC current gainhFE(1)VCE=5V,IC=150mA60320
DC current gainhFE(2)VCE=5V,IC=500mA30
Collector-emitter saturation voltageVCE(sat)IC=500mA,IB=50mA1V
Base-emitter voltageVBEVCE=5V,IC=150mA1.5V
Transition frequencyfTVCE=5V,IC=150mA140MHz
Collector output capacitanceCobVCB=10V,IE=0,f=1MHz12pF

Maximum Ratings

ParameterSymbolValueUnit
Collector-Base VoltageVCBO120V
Collector-Emitter VoltageVCEO80V
Emitter-Base VoltageVEBO5V
Collector Current -ContinuousIC1A
Collector Power DissipationPC900mW
Junction TemperatureTJ150
Storage TemperatureTstg-55-150

hFE(1) Classification

RankRange
B150-250

Package Information

Package TypePin Configuration
SOT-89-3L1. BASE
2. COLLECTOR
3. EMITTER

2410121930_HL-Haolin-Elec-2SD667-B_C2689029.pdf

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