Switching diode in SOT363 package Guangdong Hottech BAV99S designed for high speed switching circuits
Key Attributes
Model Number:
BAV99S
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Leakage Current (Ir):
1uA
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1V@150mA
Mfr. Part #:
BAV99S
Package:
SOT-363
Product Description
BAV99S Switching Diode
The BAV99S is a high-performance switching diode designed for fast switching applications. It offers high conductance and is presented as a surface mount device in the SOT-363 package, making it suitable for high-speed switching circuits.
Product Attributes
- Case: SOT-363
- Case material: Molded plastic
- UL flammability Classification rating: 94V-0
- Weight: 0.008 grams (approximate)
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Repetitive Peak Reverse Voltage | VRRM | 85 | V | (Ta = 25) |
| Reverse Voltage | VR | 75 | V | (Ta = 25) |
| Continuous Forward Current (Single Diode Load) | IF | 150 | mA | (Ta = 25) |
| Continuous Forward Current (Double Diode Load) | IF | 130 | mA | (Ta = 25) |
| Repetitive Peak Forward Current | IFRM | 500 | mA | (Ta = 25) |
| Non-Repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 4 | A | (Ta = 25) |
| Non-Repetitive Peak Forward Surge Current (at t = 1 ms) | IFSM | 1 | A | (Ta = 25) |
| Non-Repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 0.5 | A | (Ta = 25) |
| Total Power Dissipation | Ptot | 200 | mW | (Ta = 25) |
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | (Ta = 25) |
| Junction Temperature | Tj | 150 | (Ta = 25) | |
| Storage Temperature Range | Tstg | -55 to +150 | (Ta = 25) | |
| Characteristics | ||||
| Forward Voltage (at IF = 1 mA) | VF | 0.715 | V | (Ta = 25) |
| Forward Voltage (at IF = 10 mA) | VF | 0.855 | V | (Ta = 25) |
| Forward Voltage (at IF = 50 mA) | VF | 1 | V | (Ta = 25) |
| Forward Voltage (at IF = 150 mA) | VF | 1.25 | V | (Ta = 25) |
| Reverse Current (at VR = 25 V) | IR | 30 | nA | (Ta = 25) |
| Reverse Current (at VR = 75 V) | IR | 1 | A | (Ta = 25) |
| Reverse Current (at VR = 25 V, Tj = 150) | IR | 30 | A | (Ta = 25) |
| Reverse Current (at VR = 75 V, Tj = 150) | IR | 50 | A | (Ta = 25) |
| Diode Capacitance (at VR = 0, f = 1 MHz) | Cd | 1.5 | pF | (Ta = 25) |
| Reverse Recovery Time (at IF = 10 mA, IR = 10 mA, Irr = 0.1 X IR, RL = 100 ) | trr | 4 | ns | (Ta = 25) |
2507111630_Guangdong-Hottech-BAV99S_C49238179.pdf
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