Low On Resistance Dual P Channel Transistor Guangdong Hottech 4953 with Molded Plastic Case Material
Key Attributes
Model Number:
4953
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.1V
Reverse Transfer Capacitance (Crss@Vds):
70pF@15V
Number:
2 P-Channel
Input Capacitance(Ciss):
520pF@15V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
4953
Package:
SO-8
Product Description
Product Overview
This is a Dual P-Channel Enhancement Mode Field Effect Transistor designed for load switch or PWM applications. It features low on-resistance, low gate charge, and is available in a surface mount SOP-8 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- Classification Rating: UL 94V-0
- Email: hkt@heketai.com
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Off Characteristics | ||||||
| Drain-Source breakdown voltage | V(BR)DSS | -30 | -33 | V | VGS=0V, ID=-250A | |
| Zero gate voltage drain current | IDSS | -1 | A | VDS=-24V, VGS=0V | ||
| Gate-body leakage current | IGSS | 100 | nA | VDS=0V, VGS=20V | ||
| On Characteristics(Note3) | ||||||
| Gate-threshold voltage | VGS(th) | -1.1 | -1.6 | -2.1 | V | VDS=VGS, ID=-250A |
| Drain-source on-resistance | RDS(ON) | 43 | 55 | m | VGS=-10V, ID=-5.1A | |
| Drain-source on-resistance | RDS(ON) | 62 | 90 | m | VGS=-4.5V, ID=-4.2A | |
| Forward transconductance | gFS | 4 | 7 | S | VDS=-15V, ID=-4.5A | |
| Drain-Source Diode Characteristics(Note3) | ||||||
| Diode forward voltage | VSD | -1.2 | V | IS=-5.1A, VGS=0V | ||
| Dynamic Characteristics (Note4) | ||||||
| Input capacitance | Ciss | 520 | pF | VDS=-15V, VGS=0V, f=1MHz | ||
| Output capacitance | Coss | 130 | pF | |||
| Reverse transfer capacitance | Crss | 70 | pF | |||
| Switching Characteristics (Note 4) | ||||||
| Total gate charge | Qg | 11 | nC | VGS=-10V,VDS=-15V,ID=-5.1A | ||
| Gate-source charge | Qgs | 2.2 | nC | |||
| Gate-drain charge | Qgd | 3 | nC | |||
| Turn-on delay time | td(on) | 7 | nS | VGS=-10V, VDD=-15V, RGEN=6, ID=-1A | ||
| Turn-on rise time | tr | 13 | nS | |||
| Turn-off delay time | td(off) | 14 | nS | |||
| Turn-off fall time | tf | 9 | nS | |||
| MAXIMUM RATINGS | ||||||
| Drain-source voltage | VDS | -30 | V | |||
| Gate-source voltage | VGS | 20 | V | |||
| Continuous drain current | ID | -5.1 | A | |||
| Pulsed drain current(Note 1) | IDM | -20 | A | |||
| Power dissipation | PD | 2.5 | W | |||
| Thermal resistance from Junction to ambient (Note2) | RJA | 50 | C/W | |||
| Junction temperature | TJ | 150 | C | |||
| Storage temperature | TSTG | -55 ~+150 | C | |||
2410122011_Guangdong-Hottech-4953_C717603.pdf
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