600V N Channel Super Junction Power MOSFET HUAKE HCF60R150 with TO 220F Package and 100 Percent Avalanche Tested
Key Attributes
Model Number:
HCF60R150
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
24A
RDS(on):
150mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.8pF@100V
Number:
1 N-channel
Pd - Power Dissipation:
58W
Input Capacitance(Ciss):
1.48nF@100V
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
HCF60R150
Package:
TO-220F
Product Description
Product Overview
The HCF60R150 is a 600V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers a continuous drain current of 24.0A and a low on-resistance of 130m (typ.) at VGS=10V. Key features include low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for high-frequency switching mode power supplies and active power factor correction applications.
Product Attributes
- Brand: HUAKE semiconductors
- Product Type: N-Channel Super Junction Power MOSFET
- Model: HCF60R150
- Chip Version: 1.0
- Package: TO-220F
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 600 | V | |||
| ID | Drain Current - Continuous (Tc=25C) | 24.0* | A | |||
| ID | Drain Current - Continuous (Tc=100C) | 15.1* | A | |||
| IDM | Drain Current - Pulsed (Note1) | 96* | A | |||
| VGSS | Gate-Source Voltage | 30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Limit Reference Value) (Note2) | 665 | mJ | |||
| IAR | Avalanche Current (Note1) | 11.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 8.1 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 8.5 | V/ns | |||
| PD | Power Dissipation (TC =25C) | 58 | W | |||
| -Derate above 25C | 0.46 | W/C | ||||
| Tj | Operating Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 2.16 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 80 | C/W | |||
| Off Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V, ID=250A | 600 | V | ||
| BVDSS /TJ | Breakdown Voltage Temperature Coefficient | ID=250A (Referenced to 25C) | 0.64 | V/C | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=600V,VGS=0V | 1 | A | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=480V,Tc=125C | 10 | A | ||
| IGSSF | Gate-Body Leakage Current, Forward | VGS=+30V, VDS=0V | 100 | nA | ||
| IGSSR | Gate-Body Leakage Current, Reverse | VGS=-30V, VDS=0V | -100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 2.0 | 4.0 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10V, ID=12A | 130 | 150 | m | |
| gFS | Forward Transconductance | VDS=20V, ID=12A (Note4) | 15.8 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=100V,VGS=0V, f=1.0MHz | 1480 | pF | ||
| Coss | Output Capacitance | 84 | pF | |||
| Crss | Reverse Transfer Capacitance | 4.8 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 300 V, ID = 24 A, RG = 25 (Note4,5) | 22 | ns | ||
| tr | Turn-On Rise Time | 75 | ns | |||
| td(off) | Turn-Off Delay Time | 215 | ns | |||
| tf | Turn-Off Fall Time | 66 | ns | |||
| Qg | Total Gate Charge | VDS = 480 V, ID =24 A, VGS = 10 V (Note4,5) | 50 | nC | ||
| Qgs | Gate-Source Charge | 12.5 | nC | |||
| Qgd | Gate-Drain Charge | 25.8 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | 24 | A | |||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 96 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=24.0A | 1.4 | V | ||
| trr | Reverse Recovery Time | VGS =0V, IS=24.0A, d IF /dt=100A/s (Note4) | 445 | ns | ||
| Qrr | Reverse Recovery Charge | 7.1 | C | |||
2410121937_HUAKE-HCF60R150_C19725791.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
