Low capacitance and leakage current switching diode Guangdong Hottech BAV199 for surface mount performance
Key Attributes
Model Number:
BAV199
Product Custom Attributes
Reverse Leakage Current (Ir):
5nA
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Recovery Time (trr):
3ns
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
BAV199
Package:
SOT-23
Product Description
Product Overview
The BAS116/BAW156/BAV170/BAV199 series are general-purpose switching diodes designed for surface mount applications. They offer very low leakage current and low capacitance, making them suitable for various switching applications.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Package: SOT-23
- Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Weight: 0.013 grams (approximate)
Technical Specifications
| Part Number | Reverse Voltage (VR) | Peak Reverse Voltage (VRRM) | Forward Continuous Current (IF) | Non-repetitive Peak Forward Surge Current (IFSM) | Power Dissipation (PD) | Junction Temperature (TJ) | Storage Temperature (TSTG) | Reverse breakdown voltage (V(BR)) | Reverse voltage leakage current (IR) | Forward voltage (VF) | Diode capacitance (CD) | Reverse recovery time (Trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BAS116/BAW156/BAV170/BAV199 | 75 V | 100 V | 200 mA | 4.0 A | 250 mW | 150 C | -55 ~+150 C | 75 V (IR=100A) | 5 nA (VR=75V) | 0.9 V (IF=1mA) | 2 pF (VR=0V,f=1MHz) | 3 nS (IF=IR=10mA,Irr=0.1IR,RL=100) |
| 80 nA (VR=75V,TJ=150C) | 1.0 V (IF=10mA) | |||||||||||
| 1.1 V (IF=50mA) | ||||||||||||
| 1.25 V (IF=150mA) |
2410122008_Guangdong-Hottech-BAV199_C5364264.pdf
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