Surface Mount SOT23 Package Guangdong Hottech BAS70 Diodes for General Purpose Switching Applications
Key Attributes
Model Number:
BAS70
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100mA
Reverse Leakage Current (Ir):
100nA@50V
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
70mA
Mfr. Part #:
BAS70
Package:
SOT-23
Product Description
Product Overview
The BAS70/-04/-05/-06 series are Schottky barrier diodes designed for general-purpose switching applications. They feature a low forward voltage, fast switching speeds, and are available in a surface-mount SOT-23 package. These diodes are suitable for various general-purpose switching scenarios.
Product Attributes
- Brand: HOTTECH
- Origin: SHENZHEN
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
Technical Specifications
| Part Number | Reverse Voltage (VR) | Forward Continuous Current (IF) | Non-Repetitive Peak Forward Surge Current (IFSM) @ t = 8.3 ms | Power Dissipation (PD) | Reverse breakdown voltage (V(BR)) | Reverse voltage leakage current (IR) | Forward voltage (VF1) | Forward voltage (VF2) | Diode capacitance (CD) | Reverse recovery time (Trr) |
| BAS70/-04/-05/-06 | 70 V | 70 mA | 100 mA | 200 mW | 70 V (IR=10uA) | 100 nA (VR=50V) | 0.41 V (IF1=1 mA) | 1 V (IF2=15mA) | 2 pF (VR=0V,f=1MHz) | 5 nS (IF=IR=10mA Irr=0.1IR RL=100) |
2410122007_Guangdong-Hottech-BAS70_C5190148.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
