Low Gate Charge N Channel MOSFET HUAKE HST503 100V Suitable for Power Factor Correction
Key Attributes
Model Number:
HST503
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
172A
Operating Temperature -:
-
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24pF
Number:
1 N-channel
Output Capacitance(Coss):
860pF
Pd - Power Dissipation:
220W
Input Capacitance(Ciss):
7.26nF
Gate Charge(Qg):
114nC@10V
Mfr. Part #:
HST503
Package:
TO-220C
Product Description
Product Overview
The HST503 is a 100V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for high-frequency switching mode power supplies and active power factor correction.
Product Attributes
- Brand: HUAKE semiconductors
- Product Name: HST503
- Channel Type: N-Channel
- Voltage Rating: 100V
- Package Type: TO-220C
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 100 | V | |||
| ID | Drain Current - Continuous | (Tc=25℃, Silicon limit) | 172 | A | ||
| (Tc=25℃, Package limit) | 120 | A | ||||
| (Tc=100℃, Silicon limit) | 109 | A | ||||
| IDM | Drain Current - Pulsed | 480 | A | |||
| VGSS | Gate-Source Voltage | ±20 | V | |||
| EAS | Single Pulsed Avalanche Energy (Limit Reference Value) (Note5) | 448 | mJ | |||
| PD | Power Dissipation(TC =25℃) | 220 | W | |||
| -Derate above 25℃ | 1.76 | W/℃C | ||||
| Tj | Operating Junction Temperature | 150 | ℃C | |||
| Tstg | Storage Temperature Range | -55 | +150 | ℃C | ||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance, Junction to Case (Note2) | 0.57 | ℃/W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250µA | 100 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=100V,VGS=0V | -- | 1 | µA | |
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+20V, VDS=0V | -- | 100 | nA | |
| IGSSR | Gate-Body Leakage Current,Reverse | VGS=-20V, VDS=0V | -- | -100 | nA | |
| On Characteristics (Note3) | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250µA | 2.0 | 3.0 | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=50A | 3.6 | 4.5 | mΩ | |
| Dynamic Characteristics (Note4) | ||||||
| Ciss | Input Capacitance | VDS=50V,VGS=0V, f=1.0MHz | 7260 | pF | ||
| Coss | Output Capacitance | 860 | pF | |||
| Crss | Reverse Transfer Capacitance | 24 | pF | |||
| Switching Characteristics (Note4) | ||||||
| td(on) | Turn-On Delay Time | VDD = 50 V, ID =50 A, RG =3 Ω, VGS=10V | 32 | ns | ||
| tr | Turn-On Rise Time | 51 | ns | |||
| td(off) | Turn-Off Delay Time | 83 | ns | |||
| tf | Turn-Off Fall Time | 31 | ns | |||
| Gate Charge Characteristics (Note4) | ||||||
| Qg | Total Gate Charge | VDS = 50 V, ID =20A, VGS = 10 V | 114 | nC | ||
| Qgs | Gate-Source Charge | 37 | nC | |||
| Qgd | Gate-Drain Charge | 26 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current (Note2) | -- | 120 | A | ||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | 480 | A | ||
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=50A (Note3) | -- | 1.3 | V | |
| trr | Reverse Recovery Time | VGS =0V, IS=50A, d IF /dt=100A/µs (Note3) | 77 | ns | ||
| Qrr | Reverse Recovery Charge | 182 | nC | |||
2410121937_HUAKE-HST503_C19725820.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
