N Channel MOSFET 650V HUAKE SMD7N65 with Fast Switching Low Gate Charge and Avalanche Performance
Key Attributes
Model Number:
SMD7N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
15pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.38nF@25V
Pd - Power Dissipation:
48W
Mfr. Part #:
SMD7N65
Package:
TO-252
Product Description
Product Overview
The SMD7N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering efficient and reliable performance.
Product Attributes
- Brand: HUAKE semiconductors
- Product Code: SMD7N65
- Date: 2017.08
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 650 | V | |||
| ID | Drain Current - Continuous | Tc=25℃ | 7.0* | A | ||
| Tc=100℃ | 4.5* | A | ||||
| IDM | Drain Current - Pulsed (Note1) | 28* | A | |||
| VGSS | Gate-Source Voltage | ±30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Note2) | 590 | mJ | |||
| IAR | Avalanche Current (Note1) | 7.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 14.0 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation(TC =25℃) | 48 | W | |||
| -Derate above 25℃ | 0.38 | W/℃ | ||||
| Tj | Operating Junction Temperature | 150 | ℃ | |||
| Tstg | Storage Temperature Range | -55 | +150 | ℃ | ||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance,Junction to Case | 2.6 | ℃ /W | |||
| RθJA | Thermal Resistance,Junction to Ambient | 62.5 | ℃ /W | |||
| Electrical Characteristics | ||||||
| Symbol | Parameter | Test Conditons | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250µA | 650 | -- | -- | V |
| ΔBVDSS /ΔTJ | Breakdown Voltage Temperature Coefficient | ID=250µA (Referenced to 25℃) | -- | 0.7 | -- | V/℃ |
| IDSS | Zero Gate Voltage Drain Current | VDS=650V,VGS=0V | -- | -- | 1 | µA |
| VDS=520V,Tc=125℃ | -- | -- | 10 | µA | ||
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+30V, VDS=0V | -- | -- | 100 | nA |
| IGSSR | Gate-Body Leakage Current,Reverse | VGS=-30V, VDS=0V | -- | -- | -100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250µA | 2.0 | -- | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=3.5A | -- | 1.2 | 1.4 | Ω |
| gFS | Forward Transconductance | VDS=40 V, ID=3.5A (Note4) | -- | 6.5 | -- | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | -- | 1380 | -- | pF |
| Coss | Output Capacitance | -- | 170 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 15 | -- | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325 V, ID = 7.0 A, RG = 25 Ω (Note4,5) | -- | 13 | -- | ns |
| tr | Turn-On Rise Time | -- | 100 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 126 | -- | ns | |
| tf | Turn-Off Fall Time | -- | 48 | -- | ns | |
| Qg | Total Gate Charge | VDS = 520 V, ID =7.0 A, VGS = 10 V (Note4,5) | -- | 30 | -- | nC |
| Qgs | Gate-Source Charge | -- | 6 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 14 | -- | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | -- | -- | 7.0 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | -- | 28 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=7.0A | -- | -- | 1.4 | V |
| trr | Reverse Recovery Time | VGS =0V, IS=7.0A, d IF /dt=100A/µs (Note4) | -- | 315 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 2.6 | -- | µC | |
2410122013_HUAKE-SMD7N65_C570148.pdf
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