High voltage MOSFET HUAKE SMF20N65 optimized for fast switching and low gate charge in power supplies
Key Attributes
Model Number:
SMF20N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
6.3pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.65nF@25V
Pd - Power Dissipation:
74W
Gate Charge(Qg):
46.8nC@10V
Mfr. Part #:
SMF20N65
Package:
TO-220F
Product Description
Product Overview
The SMF20N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers key advantages such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it a reliable component for demanding power electronics designs.
Product Attributes
- Brand: HUAKE semiconductors
- Part Number: SMF20N65
- Date: 2017.08
- Document Version: B/0
- Document Number: HK-WI-TD-005
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 650 | V | |||
| ID | Drain Current - Continuous (Tc=25C) | 20.0* | A | |||
| ID | Drain Current - Continuous (Tc=100C) | 12.5* | A | |||
| IDM | Drain Current - Pulsed (Note1) | 80* | A | |||
| VGSS | Gate-Source Voltage | 30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Note2) | 1280 | mJ | |||
| IAR | Avalanche Current (Note1) | 20.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 37 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation(TC =25C) | 74 | W | |||
| Derate above 25C | 0.59 | W/C | ||||
| Tj | Operating Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 1.69 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62.5 | C/W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V, ID=250A | 650 | V | ||
| BVDSS /TJ | Breakdown Voltage Temperature Coefficient | ID=250A (Referenced to 25C) | 0.7 | V/C | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=650V, VGS=0V | 1 | A | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=520V, Tc=125C | 10 | A | ||
| IGSSF | Gate-Body Leakage Current, Forward | VGS=+30V, VDS=0V | 100 | nA | ||
| IGSSR | Gate-Body Leakage Current, Reverse | VGS=-30V, VDS=0V | -100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250A | 2.0 | 4.0 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=10.0A | 0.38 | 0.45 | ||
| gFS | Forward Transconductance | VDS=40 V, ID=10.0A (Note4) | 18.0 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1.0MHz | 2650 | pF | ||
| Coss | Output Capacitance | 282 | pF | |||
| Crss | Reverse Transfer Capacitance | 6.3 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325 V, ID = 20A, RG = 25 (Note4,5) | 26.5 | ns | ||
| tr | Turn-On Rise Time | 43.6 | ns | |||
| td(off) | Turn-Off Delay Time | 81.3 | ns | |||
| tf | Turn-Off Fall Time | 43.2 | ns | |||
| Qg | Total Gate Charge | VDS = 520 V, ID =20A, VGS = 10 V (Note4,5) | 46.8 | nC | ||
| Qgs | Gate-Source Charge | 13.9 | nC | |||
| Qgd | Gate-Drain Charge | 14.2 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | 20 | A | |||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 80 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS =0V, IS=20A | 1.3 | V | ||
| trr | Reverse Recovery Time | VGS =0V, IS=20A, d IF/dt=100A/s (Note4) | 590 | ns | ||
| Qrr | Reverse Recovery Charge | 7.58 | C | |||
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
2. L = 5.0mH, IAS =20.0A, VDD = 50V, RG = 25 , Starting TJ = 25C.
3. ISD20.0A, di/dt200A/s, VDDBVDSS, Starting TJ = 25C.
4. Pulse Test: Pulse Width 300 s, Duty Cycle2%.
5. Essentially Independent of Operating Temperature.
2410122013_HUAKE-SMF20N65_C563590.pdf
Related Products
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
