Energy P channel MOSFET Guangdong Hottech BSS84 suitable for fast switching electronic applications
Key Attributes
Model Number:
BSS84
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
RDS(on):
10Ω@5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF@5V
Input Capacitance(Ciss):
30pF@5V
Pd - Power Dissipation:
225mW
Mfr. Part #:
BSS84
Package:
SOT-23
Product Description
Product Overview
The BSS84 is a P-CHANNEL MOSFET designed for energy efficiency and high-speed switching. It features a low threshold voltage, making it suitable for various electronic applications requiring fast response times and reduced power consumption.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded plastic
- Flammability Classification: UL 94V-0
- Marking: B84
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions | |
| Drain-source voltage | VDS | -50 | V | ||
| Gate-source voltage | VGS | 20 | V | ||
| Continuous drain current | ID | -0.13 | A | ||
| Pulsed drain current | IDM | -0.52 | A | @ tp < 10 s (note 1) | |
| Power dissipation | PD | 225 | mW | ||
| Thermal resistance from junction to ambient | RJA | 556 | C/W | (note 2) | |
| Junction temperature | TJ | +150 | C | ||
| Storage temperature | TSTG | -55~+150 | C | ||
| Drain-source breakdown voltage | V(BR)DSS | -50 | V | VGS = 0V, ID =-250A | |
| Zero gate voltage drain current | IDSS | -15 | A | VDS =-50V,VGS = 0V | |
| Zero gate voltage drain current | IDSS | -0.1 | A | VDS =-25V,VGS = 0V | |
| Gate-body leakage current | IGSS | 5 | A | VGS =20V, VDS = 0V | |
| Gate threshold voltage | VGS(th) | -0.9 | -2 | V | VDS =VGS, ID =-250A (note 3) |
| Drain-source on-resistance | RDS(on) | 10 | 8 | VGS =-5V, ID =-0.1A; VGS =-10V, ID =-0.1A (note 3) | |
| Forward transconductance | gFS | 50 | mS | VDS=-25V; ID=-100mA (note 1) | |
| Input capacitance | Ciss | 30 | pF | VDS=5V,VGS =0V,f =1MHz | |
| Output capacitance | Coss | pF | VDS=5V,VGS =0V,f =1MHz | ||
| Reverse transfer capacitance | Crss | pF | VDS=5V,VGS =0V,f =1MHz | ||
| Turn-on delay time | td(on) | 2.5 | ns | VDD=-15V,RL=50, ID=-2.5A | |
| Turn-on rise time | tr | 1 | ns | VDD=-15V,RL=50, ID=-2.5A | |
| Turn-off delay time | td(off) | 16 | ns | VDD=-15V,RL=50, ID=-2.5A | |
| Turn-off fall time | tf | 8 | ns | VDD=-15V,RL=50, ID=-2.5A | |
| Continuous current | IS | -0.13 | A | ||
| Pulsed current | ISM | -0.52 | A | ||
| Diode forward voltage | VSD | -2.2 | V | IS=-0.13A, VGS = 0V (note 3) |
2410010101_Guangdong-Hottech-BSS84_C2886429.pdf
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