Power switching MOSFET HUASHUO AO3400A with super low gate charge and excellent dv dt effect decline
Key Attributes
Model Number:
AO3400A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
27mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
850mV
Reverse Transfer Capacitance (Crss@Vds):
61pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
927pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
11.7nC@4.5V
Mfr. Part #:
AO3400A
Package:
SOT-23
Product Description
Product Overview
The AO3400A is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It features fast switching capabilities and meets RoHS and Green Product requirements, offering full function reliability.
Product Attributes
- Green Device Available
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Advanced high cell density Trench technology
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V1 | 5.2 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V1 | 4.6 | A | |||
| IDM | Pulsed Drain Current2 | 20 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | 125 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 80 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.029 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=5A | 27 | 35 | m | |
| VGS=4.5V , ID=4A | 30 | 36 | m | |||
| VGS=2.5V , ID=3A | 39 | 52 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.6 | 0.85 | 1.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | -2.82 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=24V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=3A | 19 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.5 | 3 | ||
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=3A | 8.34 | 11.7 | nC | |
| Qgs | Gate-Source Charge | 1.26 | 1.8 | |||
| Qgd | Gate-Drain Charge | 1.88 | 2.6 | |||
| td(on) | Turn-On Delay Time | VDD=15V , VGS=4.5V , RG=3.3 ID=3A | 3.2 | 6.4 | ns | |
| tr | Rise Time | 41.8 | 75 | |||
| td(off) | Turn-Off Delay Time | 21.2 | 42 | |||
| tf | Fall Time | 6.4 | 12.8 | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 662 | 927 | pF | |
| Coss | Output Capacitance | 51.3 | 72 | |||
| Crss | Reverse Transfer Capacitance | 43.6 | 61 | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | 5.2 | A | ||
| ISM | Pulsed Source Current2,4 | 20 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| trr | Reverse Recovery Time | IF=3A , dI/dt=100A/s , TJ=25 | 6.8 | nS | ||
| Qrr | Reverse Recovery Charge | 2.3 | nC | |||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| AO3400A | SOT-23 | 3000/Tape&Reel | ||||
Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width 300us, duty cycle 2%.
3 The power dissipation is limited by 150 junction temperature.
4 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121517_HUASHUO-AO3400A_C700953.pdf
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