30V P channel MOSFET HUASHUO AO3401A fast switching device with trench technology and low gate charge
Key Attributes
Model Number:
AO3401A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
54mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
58pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
670pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
10.9nC@4.5V
Mfr. Part #:
AO3401A
Package:
SOT-23
Product Description
Product Overview
The AO3401A is a P-channel, 30V fast switching MOSFET designed for high cell density trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This product meets RoHS and Green Product requirements and is available as a Green Device. Key features include super low gate charge and excellent CdV/dt effect decline, powered by advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi (implied by URL)
- Product Type: P-Channel MOSFET
- Voltage Rating: 30V
- Switching Speed: Fast Switching
- Technology: Trench
- Certifications: RoHS, Green Product
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current | -4.2 | A | |||
| ID@TA=70 | Continuous Drain Current | -3.5 | A | |||
| IDM | Pulsed Drain Current | -19 | A | |||
| PD@TA=25 | Total Power Dissipation | 1.0 | W | |||
| PD@TA=70 | Total Power Dissipation | 0.9 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | (1) | 125 | /W | ||
| RJA | Thermal Resistance Junction-Ambient | (1) (t 10s) | 85 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.014 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-3A | 54 | 65 | m | |
| VGS=-4.5V , ID=-3A | 64 | 75 | m | |||
| VGS=-2.5V , ID=-2A | 84 | 100 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.5 | -0.9 | -1.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | 2.6 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| VDS=-24V , VGS=0V , TJ=55 | -5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | 5.5 | S | ||
| Qg | Total Gate Charge | VDS=-15V , VGS=-4.5V , ID=-3A | 10.9 | nC | ||
| Qgs | Gate-Source Charge | 1.7 | ||||
| Qgd | Gate-Drain Charge | 2.8 | ||||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-4.5V , RG=3.3, ID=-3A | 6.5 | ns | ||
| Tr | Rise Time | 26.8 | ||||
| Td(off) | Turn-Off Delay Time | 43.2 | ||||
| Tf | Fall Time | 18 | ||||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 670 | pF | ||
| Coss | Output Capacitance | 65 | ||||
| Crss | Reverse Transfer Capacitance | 58 | ||||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current (1,4) | -4.1 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 (2) | -1.2 | V | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| AO3401A | SOT-23 | 3000/Tape&Reel | ||||
Notes:
1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121642_HUASHUO-AO3401A_C700954.pdf
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