electronic component Guangdong Hottech 2N7002 N channel MOSFET with stable electrical characteristics

Key Attributes
Model Number: 2N7002
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-
RDS(on):
7Ω@5V,50mA
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
25pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
2N7002
Package:
SOT-23
Product Description

2N7002 MOSFET (N-CHANNEL)

The 2N7002 is an N-channel MOSFET designed for various electronic applications. It features low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed, making it suitable for applications requiring efficient power handling and quick response times. Its low input/output leakage further enhances its performance in sensitive circuits.

Product Attributes

  • Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
  • Part Number: 2N7002
  • Channel Type: N-CHANNEL
  • Package: SOT-23
  • Case Material: Molded Plastic
  • Flammability Classification Rating: UL 94V-0

Technical Specifications

Parameter Symbol Min Typ Max Unit Conditions
MAXIMUM RATINGS
Drain-source voltage VDS 60 V
Drain-gate voltage (RGS = 20 k) VDGR 60 V
Gate-source voltage VGS ±20 V
Continuous drain current ID 115 mA
Pulsed drain current (Note 1) IDM 800 mA
Power dissipation PD 0.35 W
Thermal resistance from Junction to ambient RJA 357 °C/W
Junction And Storage temperature Range TJ,TSTG -65 +150 °C
ELECTRICAL CHARACTERISTICS
Drain-Source breakdown voltage V(BR)DSS 60 V VGS=0V, ID=250μA
Gate-threshold voltage (note 1) VGS(th) 1 2.1 2.5 V VDS= VGS, ID=250μA
Zero gate voltage drain current IDSS 80 nA VDS=60V, VGS=0V
Gate-body leakage current IGSS ±80 nA VDS=0V, VGS=±20V
On-state Drain Current ID(ON) 500 mA VGS=10V, VDS=7V
Drain-source on-resistance (note 1) RDS(ON) 5 7 Ω VGS=10V, ID=500mA / VGS=5V, ID=50mA
Forward Transconductance gfs 80 mS VDS=10V, ID=200mA
Drain-source on-voltage VDS(on) 0.37 3.75 V VGS=10V, ID=500mA / VGS=5V, ID=50mA
Diode forward voltage (note 1) VSD 0.55 1.2 V IS=115mA, VGS=0V
Dynamic Characteristics
Input capacitance Ciss 50 pF VDS=25V, VGS=0V, f=1MHz
Output capacitance Coss 25 pF
Reverse transfer capacitance Crss 5 pF
Switching Characteristics
Turn-on delay time td(on) 20 nS VDD=25V,VGEN=10V,RG=25Ω, ID=500mA,RL=50Ω
Turn-off delay time td(off) 40 nS

Note: 1. Pulse test ; Pulse width ≤300μs, Duty cycle ≤2% .


2410122025_Guangdong-Hottech-2N7002_C181082.pdf

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