High cell density P channel mosfet HSBA70P06 60V fast switching device with low gate charge and operation
Key Attributes
Model Number:
HSBA70P06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
72A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
6mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
50pF@30V
Number:
1 P-Channel
Pd - Power Dissipation:
150W
Input Capacitance(Ciss):
5.2nF@30V
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
HSBA70P06
Package:
PRPAK5x6-8
Product Description
Product Overview
The HSBA70P06 is a P-channel, 60V, fast-switching MOSFET featuring high cell density and excellent RDSON and gate charge. It is designed for synchronous buck converter applications and meets RoHS and Green Product requirements. The device is 100% EAS guaranteed with full function reliability approval.Product Attributes
- Brand: HS-Semi (implied by www.hs-semi.cn)
- Product Type: P-Channel MOSFET
- Voltage Rating: 60V
- Switching Speed: Fast
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Specification | Value |
|---|---|
| Part Number | HSBA70P06 |
| Channel Type | P-Channel |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) | -72 A |
| Storage Temperature Range | -55 to 150 C |
| Package Code | PRPAK5*6 |
| Packaging | 3000/Tape&Reel |
Refer to figures for Typical Output Characteristics, Turn-on Resistances vs. ID, Normalized Transient Impedance, Maximum Safe Operation Area, Capacitance Characteristics, Switching Time Waveform, and Unclamped Inductive Waveform.
2410121656_HUASHUO-HSBA70P06_C7543701.pdf
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