P channel 40 volt fast switching mosfet HUASHUO HSU100P04 with low gate charge and trench technology
Key Attributes
Model Number:
HSU100P04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
722pF
Number:
1 P-Channel
Output Capacitance(Coss):
930pF
Input Capacitance(Ciss):
7.09nF
Pd - Power Dissipation:
52.1W
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
HSU100P04
Package:
TO-252-2
Product Description
Product Overview
The HSU100P04 is a P-channel, 40V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and availability as a Green Device.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch Fast Switching MOSFETs
- Compliance: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
- Technology: Advanced high cell density Trench technology
Technical Specifications
| Absolute Maximum Ratings | |||
|---|---|---|---|
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | -40 | V |
| VGS | Gate-Source Voltage | 20 | V |
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | -100 | A |
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | -64 | A |
| IDM | Pulsed Drain Current | -295 | A |
| EAS | Single Pulse Avalanche Energy | 380 | mJ |
| IAS | Avalanche Current | -50 | A |
| PD@TC=25 | Total Power Dissipation | 52.1 | W |
| PD@TA=25 | Total Power Dissipation | 2 | W |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 | |
| Thermal Data | ||||
|---|---|---|---|---|
| Symbol | Parameter | Typ. | Max. | Units |
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W |
| RJC | Thermal Resistance Junction-Case | --- | 1.8 | /W |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
|---|---|---|---|---|---|---|
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.023 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-20A | --- | 4.6 | 5.8 | m |
| VGS=-4.5V , ID=-10A | --- | 6 | 9.1 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -1.8 | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | --- | 4.74 | --- | mV/ |
| IDSS | Drain-Source Leakage Current | VDS=-32V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=-32V , VGS=0V , TJ=55 | --- | --- | 5 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-15V , ID=-18A | --- | 50 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 7 | 14 | |
| Qg | Total Gate Charge | VDS=-20V , VGS=-10V , ID=-12A | --- | 115 | --- | nC |
| Qgs | Gate-Source Charge | --- | --- | 24 | --- | nC |
| Qgd | Gate-Drain Charge | --- | --- | 26 | --- | nC |
| td(on) | Turn-On Delay Time | VDD=-20V , VGS=-10V , RG=3, ID=-12A | --- | 19 | --- | ns |
| tr | Rise Time | --- | --- | 12 | --- | ns |
| td(off) | Turn-Off Delay Time | --- | --- | 80 | --- | ns |
| tf | Fall Time | --- | --- | 18 | --- | ns |
| Ciss | Input Capacitance | VDS=-20V , VGS=0V , f=1MHz | --- | 7090 | --- | pF |
| Coss | Output Capacitance | --- | --- | 930 | --- | pF |
| Crss | Reverse Transfer Capacitance | --- | --- | 722 | --- | pF |
| Diode Characteristics | |||||
|---|---|---|---|---|---|
| Symbol | Parameter | Conditions | Typ. | Max. | Units |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | -100 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V |
| Ordering Information | ||
|---|---|---|
| Part Number | Package Code | Packaging |
| HSU100P04 | TO252-2 | 2500/Tape&Reel |
2410121629_HUASHUO-HSU100P04_C2987712.pdf
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