High cell density trench technology p channel mosfet huashuo hsce3031 optimized for power switching

Key Attributes
Model Number: HSCE3031
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
RDS(on):
5.2mΩ@10V;7mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
1 P-Channel
Pd - Power Dissipation:
52W
Output Capacitance(Coss):
255pF
Input Capacitance(Ciss):
3.45nF
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
HSCE3031
Package:
DFN-8(3.3x3.3)
Product Description

Product Overview

The HSCE3031 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features approved full function reliability. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Ch 30V Fast Switching MOSFETs
  • Technology: Advanced high cell density Trench technology
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed, Full Function Reliability Approved

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage 20 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V1,6 -50 A
ID@TC=70 Continuous Drain Current, VGS @ -10V1,6 -40 A
IDM Pulsed Drain Current2 -200 A
EAS Single Pulse Avalanche Energy3 80 mJ
IAS Avalanche Current -40 A
PD@TC=25 Total Power Dissipation4 52 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
Symbol Parameter Conditions Typ. Max. Unit
RJA Thermal Resistance Junction-ambient 1(t10S) 20 /W
RJA Thermal Resistance Junction-ambient 1(Steady State) 55 /W
RJC Thermal Resistance Junction-case 1 2.5 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 V
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-20A 5.2 6.5 m
RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V , ID=-15A 7 8.5 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.6 -2.5 V
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25 -1 uA
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=55 -5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 1.2
Qg Total Gate Charge (-10V) VDS=-15V , VGS=-10V , ID=-18A 60 nC
Qgs Gate-Source Charge 9 nC
Qgd Gate-Drain Charge 15 nC
Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3, ID=-20A 17 ns
Tr Rise Time 40 ns
Td(off) Turn-Off Delay Time 55 ns
Tf Fall Time 13 ns
Ciss Input Capacitance VDS=-25V , VGS=0V , f=1MHz 3450 pF
Coss Output Capacitance 255 pF
Crss Reverse Transfer Capacitance 140 pF
Diode Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
IS Continuous Source Current1,5 VG=VD=0V , Force Current -50 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 -1.2 V
trr Reverse Recovery Time IF=-20A , di/dt=100A/s , TJ=25 22 nS
Qrr Reverse Recovery Charge 72 nC
Ordering Information
Part Number Package code Packaging
HSCE3031 DFN3.3*3.3 3000/Tape&Reel

2508281825_HUASHUO-HSCE3031_C51025845.pdf

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