High cell density trench technology p channel mosfet huashuo hsce3031 optimized for power switching
Product Overview
The HSCE3031 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features approved full function reliability. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch 30V Fast Switching MOSFETs
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | 20 | 20 | V | ||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1,6 | -50 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ -10V1,6 | -40 | A | |||
| IDM | Pulsed Drain Current2 | -200 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 80 | mJ | |||
| IAS | Avalanche Current | -40 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 52 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| Symbol | Parameter | Conditions | Typ. | Max. | Unit | |
| RJA | Thermal Resistance Junction-ambient | 1(t10S) | 20 | /W | ||
| RJA | Thermal Resistance Junction-ambient | 1(Steady State) | 55 | /W | ||
| RJC | Thermal Resistance Junction-case | 1 | 2.5 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-20A | 5.2 | 6.5 | m | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-15A | 7 | 8.5 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -1.6 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=55 | -5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.2 | |||
| Qg | Total Gate Charge (-10V) | VDS=-15V , VGS=-10V , ID=-18A | 60 | nC | ||
| Qgs | Gate-Source Charge | 9 | nC | |||
| Qgd | Gate-Drain Charge | 15 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-20A | 17 | ns | ||
| Tr | Rise Time | 40 | ns | |||
| Td(off) | Turn-Off Delay Time | 55 | ns | |||
| Tf | Fall Time | 13 | ns | |||
| Ciss | Input Capacitance | VDS=-25V , VGS=0V , f=1MHz | 3450 | pF | ||
| Coss | Output Capacitance | 255 | pF | |||
| Crss | Reverse Transfer Capacitance | 140 | pF | |||
| Diode Characteristics | ||||||
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -50 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-20A , di/dt=100A/s , TJ=25 | 22 | nS | ||
| Qrr | Reverse Recovery Charge | 72 | nC | |||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSCE3031 | DFN3.3*3.3 | 3000/Tape&Reel | ||||
2508281825_HUASHUO-HSCE3031_C51025845.pdf
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