60 Volt 150 Amp N Channel MOSFET HSBA6076 HUASHUO Ideal for Synchronous Buck Converter Circuits
Key Attributes
Model Number:
HSBA6076
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
150A
RDS(on):
1.6mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
28pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
5.98nF@30V
Pd - Power Dissipation:
110W
Gate Charge(Qg):
105nC@10V
Mfr. Part #:
HSBA6076
Package:
PRPAK5x6-8
Product Description
Product Overview
The HSBA6076 is a high cell density SGT N-channel MOSFET designed for fast switching applications. It offers excellent RDSON and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Specification | Value |
|---|---|
| Part Number | HSBA6076 |
| Type | N-Channel MOSFET |
| Voltage Rating (VDS) | 60 V |
| Continuous Drain Current (ID) | 150 A |
| Storage Temperature Range | -55 to 150 C |
| Package Code | PRPAK5*6 |
| Packaging | 3000/Tape&Reel |
2410121656_HUASHUO-HSBA6076_C7543698.pdf
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