N channel MOSFET Guangdong Hottech AO3404 with molded plastic case and UL flammability rating 94V 0
Key Attributes
Model Number:
AO3404
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
RDS(on):
31mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 N-channel
Output Capacitance(Coss):
45pF
Input Capacitance(Ciss):
310pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.3nC@10V
Mfr. Part #:
AO3404
Package:
SOT-23
Product Description
Product Overview
The AO3404 is a low voltage N-channel MOSFET designed for PWM and load switch applications. It features ultra low on-resistance, making it suitable for efficient power management. This surface mount device comes in a SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- UL Flammability Classification Rating: 94V-0
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-source voltage | VDS | 30 | V | |
| Gate-source voltage | VGS | ±20 | V | |
| Continuous drain current (TA=25°C) | ID | 5 | A | |
| Continuous drain current (TA=70°C) | ID | 4 | A | |
| Pulsed drain current | IDM* | 20 | A | |
| Power dissipation (TA=25°C) | PD | 1.40 | W | |
| Power dissipation (TA=70°C) | PD | 0.9 | W | |
| Thermal resistance from Junction to ambient | RθJA | 125 | °C/W | |
| Junction temperature | TJ | 150 | °C | |
| Storage temperature | TSTG | -55 ~+150 | °C | |
| Drain-Source breakdown voltage | V(BR)DSS* | 30 | V | VGS=0V, ID=250μA |
| Zero gate voltage drain current | IDSS* | 1 | μA | VDS=30V, VGS=0V |
| Gate-body leakage current | IGSS* | ±100 | nA | VDS=0V, VGS=±20V |
| Gate-threshold voltage | VGS(th)* | 1.2 - 1.8 - 2.4 | V | VDS=VGS, ID=250μA |
| Drain-source on-resistance | RDS(ON)* | 25.5 - 31 | mΩ | VGS=10V, ID=5A |
| Drain-source on-resistance | RDS(ON)* | 41 - 50 | mΩ | VGS=10V, ID=5A, TJ=125°C |
| Drain-source on-resistance | RDS(ON)* | 34 - 43 | mΩ | VGS=4.5V, ID=4A |
| On-State Drain Current | ID(ON) | 20 | A | VDS=5V, VGS=10V |
| Forward transconductance | gFS | 15 | S | VDS=5V, ID=5A |
| Gate resistance | Rg | 1.6 - 3.25 - 4.9 | Ω | VGS=0V, VDS=0V, f=1MHz |
| Input capacitance | Ciss | 255 - 310 | pF | VDS=15V, VGS=0V, f=1MHz |
| Output capacitance | Coss | 45 | pF | VDS=15V, VGS=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 35 - 50 | pF | VDS=15V, VGS=0V, f=1MHz |
| Turn-on delay time | td(on) | 4.5 | nS | VDS=15V, VGS=10V, RGEN=3Ω, RL=3Ω |
| Turn-on rise time | tr | 2.5 | nS | VDS=15V, VGS=10V, RGEN=3Ω, RL=3Ω |
| Turn-off delay time | td(off) | 14.5 | nS | VDS=15V, VGS=10V, RGEN=3Ω, RL=3Ω |
| Turn-off fall time | tf | 3.5 | nS | VDS=15V, VGS=10V, RGEN=3Ω, RL=3Ω |
| Total gate charge | Qg | 5.2 - 6.3 | nC | VDS=15V,VGS=10V,ID=5A |
| Gate-source charge | Qgs | 0.85 | nC | VDS=15V,VGS=10V,ID=5A |
| Gate-drain charge | Qgd | 1.3 | nC | VDS=15V,VGS=10V,ID=5A |
| Diode forward voltage | VSD | 0.76 - 1 | V | IS=1A, VGS=0V |
| Diode forward current | IS | 1.5 | A | |
| Body Diode Reverse Recovery Time | trr | 8.5 | nS | IF=5A, dI/dt=100A/us |
| Body Diode Reverse Recovery Charge | Qrr | 2.2 | nC | IF=5A, dI/dt=100A/us |
2409302203_Guangdong-Hottech-AO3404_C192925.pdf
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