Low gate charge trench n channel mosfet HUASHUO HSBA0715 designed for synchronous buck converters
Key Attributes
Model Number:
HSBA0715
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
36pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
4.59nF@75V
Pd - Power Dissipation:
187W
Gate Charge(Qg):
68nC@4.5V
Mfr. Part #:
HSBA0715
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA0715 is a high-performance Super trench N-channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements, with 100% EAS guaranteed and full functional reliability approved. Key features include super low gate charge, green device availability, and excellent Cdv/dt effect decline, all enabled by advanced high cell density Trench technology.
Product Attributes
- Brand: HS
- Product Type: N-Ch Fast Switching MOSFETs
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSBA0715 | Drain-Source Voltage (VDS) | 150 | V | |||
| Gate-Source Voltage (VGS) | ±25 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | 90 | A | |||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | 63 | A | |||
| Pulsed Drain Current (IDM) | 360 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 760 | mJ | ||||
| Avalanche Current (IAS) | 110 | A | ||||
| Total Power Dissipation (PD@TC=25) | 187 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 175 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 175 | ||||
| Thermal Resistance Junction-ambient (RJA) | 62.5 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 0.8 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 150 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=10V , ID=30A | 7.95 | 8.8 | m | ||
| VGS=6V , ID=20A | 9.42 | 11.5 | m | |||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 2 | 4 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=120V , VGS=0V , TJ=25 | 1 | µA | |||
| Drain-Source Leakage Current (IDSS) | VDS=120V , VGS=0V , TJ=85 | 30 | µA | |||
| Gate-Source Leakage Current (IGSS) | VGS=±25V , VDS=0V | ±100 | nA | |||
| Total Gate Charge (Qg) | VDS=75V , VGS=4.5V , ID=10A | 68 | nC | |||
| Gate-Source Charge (Qgs) | 23 | nC | ||||
| Gate-Drain Charge (Qgd) | 12 | nC | ||||
| Turn-On Delay Time (Td(on)) | VDD=75V , VGS=10V , ID=30A. RG=3.9, RL=2.5 | 16 | ns | |||
| Rise Time (Tr) | 29 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 44 | ns | ||||
| Fall Time (Tf) | 22 | ns | ||||
| Input Capacitance (Ciss) | VDS=75V , VGS=0V , f=1MHz | 4590 | pF | |||
| Output Capacitance (Coss) | 319 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 36 | pF | ||||
| Diode Forward Voltage (VSD) | VGS=0V , IS=30A , TJ=25 | 1.3 | V | |||
| Reverse Recovery Time (trr) | IF=30A , dI/dt=100A/µs , TJ=25 | 92 | nS | |||
| Reverse Recovery Charge (Qrr) | 340 | nC |
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSBA0715 | PRPAK5*6 | Tape&Reel | 5000 |
2409272232_HUASHUO-HSBA0715_C2987716.pdf
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