N Channel MOSFET Guangdong Hottech 2N7002K designed for consumption and fast switching in electronics
Key Attributes
Model Number:
2N7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-
RDS(on):
5.3Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Input Capacitance(Ciss):
40pF
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description
Product Overview
The 2N7002K is an N-Channel MOSFET designed for various electronic applications. It features low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed, making it suitable for efficient power management and signal switching. Its low input/output leakage contributes to reduced power consumption.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Product Name: 2N7002K
- Type: MOSFET (N-CHANNEL)
- Package: SOT-23
- Case Material: Molded Plastic
- Classification Rating: UL 94V-0
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Drain-source voltage | VDS | 60 | V | TA = 25C unless otherwise noted | ||
| Gate-source voltage | VGS | 20 | V | TA = 25C unless otherwise noted | ||
| Continuous drain current | ID | 340 | mA | TA = 25C unless otherwise noted | ||
| Pulsed drain current | IDM | 800 | mA | Note 1 | ||
| Power dissipation | PD | 0.35 | W | TA = 25C unless otherwise noted | ||
| Thermal resistance from Junction to ambient | RJA | 357 | C/W | TA = 25C unless otherwise noted | ||
| Junction And Storage temperature Range | TJ,TSTG | -65 | +150 | C | ||
| Drain-Source breakdown voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250A | ||
| Gate-threshold voltage | VGS(th) | 1 | 1.3 | 2.5 | V | VDS= VGS, ID=1mA |
| Zero gate voltage drain current | IDSS | 1 | A | VDS=48V, VGS=0V | ||
| Gate-body leakage current | IGSS | 10 | A | VDS=0V, VGS=20V | ||
| 200 | nA | VDS=0V, VGS=10V | ||||
| 100 | nA | VDS=0V, VGS=5V | ||||
| Drain-source on-resistance | RDS(ON) | 1.1 | 5.3 | VGS=4.5V, ID=0.2A | ||
| 0.9 | 5 | VGS=10V, ID=0.5A | ||||
| Diode forward voltage | VSD | 1.5 | V | IS=0.3A, VGS=0V | ||
| Gate-Source Breakdown Voltage | BVGSO | 21.5 | 30 | V | Igs=1mA (Open Drain) | |
| Recovered charge | Qr | 30 | nC | VGS=0V,IS=0.3A,VR=25V, dls/dt=-100A/S | ||
| Input capacitance | Ciss | 40 | pF | VDS=10V, VGS=0V, f=1MHz | ||
| Output capacitance | Coss | 30 | pF | VDS=10V, VGS=0V, f=1MHz | ||
| Reverse transfer capacitance | Crss | 10 | pF | VDS=10V, VGS=0V, f=1MHz | ||
| Turn-on delay time | td(on) | 3 | nS | VDD=50V,VGS=10V,RG=50, RGS=50,RL=250 | ||
| Turn-off delay time | td(off) | 15 | nS | VDD=50V,VGS=10V,RG=50, RGS=50,RL=250 | ||
| Reverse recovery time | trr | 26 | nS | VGS=0V,IS=0.3A,VR=25V, dls/dt=-100A/S |
2410010331_Guangdong-Hottech-2N7002K_C181083.pdf
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