Dual N Channel MOSFET Guangdong Hottech 9926A Plastic SOP8 Package Low Voltage Switching Transistor
Key Attributes
Model Number:
9926A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-
RDS(on):
42mΩ@1.8V,4A
Gate Threshold Voltage (Vgs(th)):
800mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
129pF
Number:
2 N-Channel
Output Capacitance(Coss):
163pF
Input Capacitance(Ciss):
1.05nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
15.2nC@4.5V
Mfr. Part #:
9926A
Package:
SOP-8
Product Description
Product Overview
The 9926A is a dual N-Channel enhancement mode field-effect transistor encapsulated in a plastic SOP-8 package. It features a low Drain-Source Voltage (VDS) of 20V and a continuous Drain Current (ID) of 7A. With low Static Drain-Source On-Resistance (RDS(ON)) values, it offers efficient performance, particularly at lower gate-source voltages. This MOSFET is suitable for various switching and amplification applications.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
- Model: 9926A
- Package: SOP-8
- Material: Plastic-Encapsulate
- Origin: China (implied by brand)
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage | 20 | V | |||
| Gate-Source Voltage | ±8 | V | |||
| Pulsed Drain Current | TA=25°C | 40 | A | ||
| Continuous Drain Current | TA=25°C | 7 | A | ||
| Continuous Drain Current | TA=70°C | 1.44 | A | ||
| Power Dissipation | TA=25°C | 2 | W | ||
| Junction and Storage Temperature Range | -55 | 150 | °C | ||
| Electrical Characteristics (TJ=25°C unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage | ID=250µA, VGS=0V | 20 | V | ||
| Zero Gate Voltage Drain Current | VDS=16V, VGS=0V | 1 | µA | ||
| Gate-Body Leakage Current | VDS=0V, VGS=±8V | 100 | nA | ||
| Gate Threshold Voltage | VDS=VGS, ID=250µA | 0.3 | 0.5 | 0.8 | V |
| On state drain current | VGS=4.5V, VDS=5V | 30 | A | ||
| Static Drain-Source On-Resistance | VGS=4.5V, ID=7A | 21.6 | 26 | mΩ | |
| Static Drain-Source On-Resistance | VGS=2.5V, ID=5A | 26.4 | 33 | mΩ | |
| Static Drain-Source On-Resistance | VGS=1.8V, ID=4A | 33.3 | 42 | mΩ | |
| Forward Transconductance | VDS=5V, ID=5A | 22 | S | ||
| Diode Forward Voltage | IS=1A | 0.76 | 1 | V | |
| Maximum Body-Diode Continuous Current | 3 | A | |||
| Input Capacitance | VGS=0V, VDS=10V, f=1MHz | 1050 | pF | ||
| Output Capacitance | VGS=0V, VDS=10V, f=1MHz | 163 | pF | ||
| Reverse Transfer Capacitance | VGS=0V, VDS=10V, f=1MHz | 129 | pF | ||
| Turn-On DelayTime | VGS=5V, VDS=10V, RL=1.5Ω, RGEN=3Ω | 6.5 | ns | ||
| Rise Time | VGS=5V, VDS=10V, RL=1.5Ω, RGEN=3Ω | 9 | ns | ||
| Turn-Off DelayTime | VGS=5V, VDS=10V, RL=1.5Ω, RGEN=3Ω | 56.5 | ns | ||
| Fall Time | VGS=5V, VDS=10V, RL=1.5Ω, RGEN=3Ω | 13.2 | ns | ||
| Body Diode Reverse Recovery time | IF=5A, dI/dt=100A/µs | 21 | ns | ||
| Body Diode Reverse Recovery charge | IF=5A, dI/dt=100A/µs | 7.1 | nC | ||
| Total Gate Charge | VGS=4.5V, VDS=10V, ID=7A | 15.2 | nC | ||
| Gate Source Charge | VGS=4.5V, VDS=10V, ID=7A | 1 | nC | ||
| Gate Drain Charge | VGS=4.5V, VDS=10V, ID=7A | 4 | nC | ||
| Thermal Characteristics | |||||
| Maximum Junction-to-Lead | Steady-State | 35 | 40 | °C/W | |
| Maximum Junction-to-Ambient | Steady-State (Note A) | 62.5 | °C/W | ||
2410121521_Guangdong-Hottech-9926A_C181101.pdf
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