600V N channel MOSFET Hangzhou Silan Microelectronics SVF4N60CAD transistor for power supply designs
Key Attributes
Model Number:
SVF4N60CAD
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2Ω@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.5pF
Number:
-
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
433pF
Pd - Power Dissipation:
77W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
SVF4N60CAD
Package:
TO-252
Product Description
Product Overview
The SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field-effect transistor manufactured using Silan's F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse withstand capability in avalanche and commutation modes. It is widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU
- Hazardous Substance Control: Halogen free, Pb free
Technical Specifications
| Characteristic | Symbol | SVF4N60CAF | SVF4N60CAK | SVF4N60CAD | SVF4N60CAMN/MJ | SVF4N60CAT | Unit |
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | ||||
| Gate-Source Voltage | VGS | 30 | V | ||||
| Drain Current (TC=25C) | ID | 4.0 | A | ||||
| Drain Current (TC=100C) | ID | 2.5 | A | ||||
| Drain Current Pulsed | IDM | 16 | A | ||||
| Power Dissipation (TC=25C) | PD | 33 | 92 | 77 | 86 | 110 | W |
| Single Pulsed Avalanche Energy (Note1) | EAS | 217 | mJ | ||||
| Operation Junction Temperature Range | TJ | -55+150 | C | ||||
| Storage Temperature Range | Tstg | -55+150 | C | ||||
| Thermal Resistance, Junction-to-Case | RJC | 3.85 | 1.36 | 1.61 | 1.45 | 1.14 | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | 62.5 | 62.0 | 62.0 | 62.5 | C/W |
| Drain-Source Leakage Current (VDS=600V, VGS=0V) | IDSS | 1.0 | A | ||||
| Gate-Source Leakage Current (VGS=30V, VDS=0V) | IGSS | 100 | nA | ||||
| Gate Threshold Voltage (VGS=VDS, ID=250A) | VGS(th) | 2.04.0 | V | ||||
| Static Drain-Source On State Resistance (VGS=10V, ID=2.0A) | RDS(on) | 2.0 (typ.), 2.4 (max.) | |||||
| Input Capacitance (VDS=25V,VGS=0V, f=1.0MHz) | Ciss | 433 | pF | ||||
| Output Capacitance | Coss | 55 | pF | ||||
| Reverse Transfer Capacitance | Crss | 4.5 | pF | ||||
| Turn-on Delay Time (Note2,3) | td(on) | 10 | ns | ||||
| Turn-on Rise Time | tr | 26 | ns | ||||
| Turn-off Delay Time | td(off) | 29 | ns | ||||
| Turn-off Fall Time | tf | 26 | ns | ||||
| Total Gate Charge (Note 2,3) | Qg | 13 | nC | ||||
| Gate-Source Charge | Qgs | 2.8 | nC | ||||
| Gate-Drain Charge | Qg d | 6.2 | nC | ||||
| Continuous Source Current | IS | 4.0 | A | ||||
| Pulsed Source Current | ISM | 16 | A | ||||
| Diode Forward Voltage (IS=4.0A,VGS=0V) | VSD | 1.4 | V | ||||
| Reverse Recovery Time (Note 2) | Trr | 420 | ns | ||||
| Reverse Recovery Charge | Qrr | 1.8 | C | ||||
2501091111_Hangzhou-Silan-Microelectronics-SVF4N60CAD_C467746.pdf
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