N Channel MOSFET Guangdong Hottech SI2306 Plastic Encapsulation Ideal for Various Electronic Circuits
Key Attributes
Model Number:
SI2306
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
-
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
305pF
Pd - Power Dissipation:
750mW
Gate Charge(Qg):
4.5nC@5V
Mfr. Part #:
SI2306
Package:
SOT-23
Product Description
Product Overview
The SI2306 is a plastic-encapsulated N-Channel MOSFET designed for general-purpose applications. It offers reliable and rugged performance with low on-resistance, making it suitable for various switching and amplification tasks.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
- Product Name: SI2306
- Type: N-Channel MOSFET
- Encapsulation: Plastic
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |
| Absolute Maximum Ratings | Drain-Source Voltage | VGS = 0V, ID =250A | 30 | V | |||
| Gate-Source Voltage | 20 | V | |||||
| Drain Current (Continuous) | ID | @TA=25 C | 3.16 | A | |||
| Drain Current (Pulsed) | IDM | a | 10 | A | |||
| Total Power Dissipation | PD | @TA=25 C | 0.75 | W | |||
| Operating Junction and Storage Temperature Range | Tj, Tstg | -55 | +150 | C | |||
| Thermal Resistance Junction to Ambient (PCB mounted) | RJA | 100 | C/W | ||||
| Static Drain-Source Breakdown Voltage | V(BR)DS | VGS = 0V, ID =250A | 30 | V | |||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 3.0 | V | ||
| Gate-Body Leakage | IGSS | VDS =0V, VGS =20V | 100 | nA | |||
| Electrical Characteristics | Zero Gate Voltage Drain Current | IDSS | VDS =30V, VGS =0V | 0.5 | A | ||
| Drain-Source On-Resistance | RDS(on) | VGS =10V, ID =3.5A | 0.038 | 0.047 | |||
| VGS =4.5V, ID =2.8A | 0.052 | 0.065 | |||||
| Forward Transconductance | gfs | VDS =4.5V, ID =2.5A | 7.0 | S | |||
| Diode Forward Voltage | VSD | IS=1.25A,VGS=0V | 0.8 | 1.2 | V | ||
| Gate Charge | Qg | VDS =15V,VGS =5V,ID =2.5A | 3.0 | 4.5 | nC | ||
| Total Gate Charge | Qgt | 6 | 9 | ||||
| Gate-Source Charge | Qgs | 1.6 | |||||
| Gate-Drain Charge | Qg | VDS =15V,VGS =10V,ID =2.5A | 0.6 | ||||
| Gate Resistance | Rg | f =1.0MHz | 2.5 | 7.5 | |||
| Input Capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 305 | pF | |||
| Output Capacitance | Coss | 65 | |||||
| Reverse Transfer Capacitance | Crss | 29 | |||||
| Switching Characteristics | Turn-On Delay Time | td(on) | VDD=15V, RL=15, ID 1A, VGEN=10V,Rg=6 | 7 | 11 | ns | |
| Rise Time | tr | 12 | 18 | ||||
| Turn-Off Delay Time | td(off) | 14 | 25 | ||||
| Fall Time | tf | 6 | 10 |
Notes: a.Pulse Test : Pulse Width300s, duty cycle 2%.
2410121908_Guangdong-Hottech-SI2306_C181089.pdf
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