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quality N channel enhancement mode MOSFET Hangzhou Silan Microelectronics SVS11N65FJD2 for power electronics factory
quality N channel enhancement mode MOSFET Hangzhou Silan Microelectronics SVS11N65FJD2 for power electronics factory

N channel enhancement mode MOSFET Hangzhou Silan Microelectronics SVS11N65FJD2 for power electronics

Key Attributes
Model Number: SVS11N65FJD2
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
330mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.3pF
Number:
1 N-channel
Output Capacitance(Coss):
37pF
Input Capacitance(Ciss):
632pF
Pd - Power Dissipation:
35W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
SVS11N65FJD2
Package:
TO-220F-3
Product Description

Product Description

The SVS11N65D/F/S/FJD2 is an N-channel enhancement mode high voltage power MOSFET from Silan Microelectronics, utilizing advanced super junction MOS technology. This design offers low conduction and switching losses, enabling high efficiency, high power density, and superior thermal performance in power converters. It is universally applicable for both hard and soft switching topologies.

Product Attributes

  • Brand: Silan Microelectronics
  • Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
  • Hazardous Substance Control: Halogen free

Technical Specifications

Part NumberPackageMarkingDrain-Source Voltage (VDS)Gate-Source Voltage (VGS)Drain Current (ID) @ TC=25CDrain Current (ID) @ TC=100CRDS(on)(typ.) @ VGS=10VPower Dissipation (PD) @ TC=25CAvalanche Energy (EAS)Thermal Resistance (RJC)
SVS11N65DD2TRTO-252-2L11N65DD2650V30V11A-0.3387W250mJ1.44C/W
SVS11N65FD2TO-220F-3L11N65FD2650V30V11A-0.3335W250mJ3.57C/W
SVS11N65SD2TO-263-2L11N65SD2650V30V11A-0.3392W250mJ1.36C/W
SVS11N65SD2TRTO-263-2L11N65SD2650V30V11A-0.3392W250mJ1.36C/W
SVS11N65FJD2TO-220FJ-3L11N65FJD2650V30V11A-0.3335W250mJ3.57C/W

Electrical Characteristics

CharacteristicSymbolTest ConditionsMin.Typ.Max.Unit
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=250A650--V
Drain-Source Leakage CurrentIDSSVDS=650V, VGS=0V--1.0A
Gate-Source Leakage CurrentIGSSVGS=30V, VDS=0V--100nA
Gate Threshold VoltageVGS(th)VGS=VDS, ID=250A2.0-4.0V
Static Drain-Source on State ResistanceRDS(on)VGS=10V, ID=5.5A-0.330.4
Input CapacitanceCissf=1MHz, VGS=0V, VDS=100V-632-pF
Output CapacitanceCossf=1MHz, VGS=0V, VDS=100V-37-pF
Reverse Transfer CapacitanceCrssf=1MHz, VGS=0V, VDS=100V-2.3-pF
Total Gate ChargeQgVDD=520V, VGS=10V, ID=11A-23-nC

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbolTest ConditionsMin.Typ.Max.Unit
Continuous Source CurrentIS---11A
Pulsed Source CurrentISM---44A
Diode Forward VoltageVSDIS=11A, VGS=0V--1.4V
Reverse Recovery TimeTrrIS=11A, VGS=0V, dIF/dt=100A/s-361-ns
Reverse Recovery ChargeQrrIS=11A, VGS=0V, dIF/dt=100A/s-3.9-C

2501091111_Hangzhou-Silan-Microelectronics-SVS11N65FJD2_C403826.pdf

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