Durable P Channel MOSFET HUASHUO HSBB10P15 Featuring Low Gate Charge and Green Product Certification
Key Attributes
Model Number:
HSBB10P15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
345mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF
Number:
1 P-Channel
Output Capacitance(Coss):
2.021nF
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
2.021nF@50V
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
HSBB10P15
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB10P15 is a P-Channel Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full function reliability approval. Key features include 100% EAS Guaranteed, Green Device availability, super low gate charge, and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Absolute Maximum Ratings | |||
|---|---|---|---|
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | -150 | V |
| VGS | Gate-Source Voltage | 20 | V |
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | -10 | A |
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | -7 | A |
| IDM | Pulsed Drain Current | -35 | A |
| EAS | Single Pulse Avalanche Energy | 73 | mJ |
| PD@TC=25 | Total Power Dissipation | 35 | W |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 | |
| Thermal Data | ||||
|---|---|---|---|---|
| Symbol | Parameter | Typ. | Max. | Units |
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W |
| RJC | Thermal Resistance Junction-Case | --- | 2.9 | /W |
| Product Summary | ||||||
|---|---|---|---|---|---|---|
| Symbol | Parameter | Conditions | Typ. | Max. | Units | |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -150 | --- | V | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-5A | 290 | 345 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -2 | -2.7 | -4 | V |
| IDSS | Drain-Source Leakage Current | VDS=-150V , VGS=0V , TJ=25 | --- | -1 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=-10V , ID=-5A | --- | 10 | S | |
| Qg | Total Gate Charge | VDS=-50V , VGS=-10V , ID=-5A | --- | 39 | nC | |
| Td(on) | Turn-On Delay Time | VDD=-50V , VGS=-10V , RG=3.3, ID=-5A | --- | 33 | ns | |
| Tr | Rise Time | --- | 27 | ns | ||
| Td(off) | Turn-Off Delay Time | --- | 250 | ns | ||
| Tf | Fall Time | --- | 130 | ns | ||
| Ciss | Input Capacitance | VDS=-50V , VGS=0V , f=1MHz | --- | 2021 | pF | |
| Coss | Output Capacitance | --- | 44 | pF | ||
| Crss | Reverse Transfer Capacitance | --- | 37 | pF | ||
| Diode Characteristics | |||||
|---|---|---|---|---|---|
| Symbol | Parameter | Conditions | Typ. | Max. | Units |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | -10 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V |
| trr | Reverse Recovery Time | IF=-2A , di/dt=-100A/s , TJ=25 | --- | 35 | ns |
| Qrr | Reverse Recovery Charge | --- | 32 | nC | |
| Ordering Information | ||
|---|---|---|
| Part Number | Package code | Packaging |
| HSBB10P15 | PRPAK3*3 | 3000/Tape&Reel |
2410122026_HUASHUO-HSBB10P15_C22359237.pdf
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