N channel MOSFET HUASHUO HSBA0048 designed for fast switching and synchronous rectification circuits
Key Attributes
Model Number:
HSBA0048
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
78A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.6mΩ@10V,13.5A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
20pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
3.32nF@50V
Pd - Power Dissipation:
108W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
HSBA0048
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA0048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous rectification in AC/DC quick chargers. This MOSFET is 100% EAS guaranteed, RoHS and Halogen-Free compliant, and features low RDS(ON) and low gate charge.
Product Attributes
- Brand: HS-Semi (implied by www.hs-semi.cn)
- Channel Type: N-Channel
- Compliance: RoHS and Halogen-Free
- EAS Guaranteed: 100%
Technical Specifications
| Model | Parameter | Rating/Value | Units | Conditions |
|---|---|---|---|---|
| HSBA0048 | Drain-Source Voltage (VDS) | 100 | V | |
| Gate-Source Voltage (VGS) | ±20 | V | ||
| Continuous Drain Current (ID) @TC=25 | 78 | A | 1,6 | |
| Continuous Drain Current (ID) @TC=70 | 62 | A | 1,6 | |
| Pulsed Drain Current (IDM) | 280 | A | 2 | |
| Single Pulse Avalanche Energy (EAS) | 61 | mJ | 3 | |
| Avalanche Current (IAS) | 23 | A | ||
| Total Power Dissipation (PD) @TC=25 | 108 | W | 4 | |
| Storage Temperature Range (TSTG) | -55 to 150 | |||
| Operating Junction Temperature Range (TJ) | -55 to 150 | |||
| Thermal Resistance Junction-Ambient (RJA) | 25 | /W | 1 (t≤10s) | |
| Thermal Resistance Junction-Ambient (RJA) | 55 | /W | 1 | |
| Thermal Resistance Junction-Case (RJC) | 1.15 | /W | 1 | |
| HSBA0048 | Drain-Source Breakdown Voltage (BVDSS) | 100 | V | VGS=0V , ID=250uA |
| Static Drain-Source On-Resistance (RDS(ON)) | 6.6 | m | VGS=10V , ID=13.5A (Typ.) | |
| Static Drain-Source On-Resistance (RDS(ON)) | 8.7 | m | VGS=4.5V , ID=11.5A (Typ.) | |
| Gate Threshold Voltage (VGS(th)) | 1.2 to 2.3 | V | VGS=VDS , ID =250uA | |
| Drain-Source Leakage Current (IDSS) | 1 | uA | VDS=80V , VGS=0V , TJ=25 (Max.) | |
| Gate-Source Leakage Current (IGSS) | ±100 | nA | VGS=±20V , VDS=0V (Max.) | |
| Total Gate Charge (Qg) | 45 | nC | VDS=50V , VGS=10V , ID=13.5A (Typ.) | |
| Total Gate Charge (Qg) | 19.3 | nC | VDS=50V , VGS=4.5V , ID=11.5A (Typ.) | |
| Input Capacitance (Ciss) | 3320 | pF | VDS=50V , VGS=0V , f=1MHz (Typ.) | |
| Output Capacitance (Coss) | 605 | pF | VDS=50V , VGS=0V , f=1MHz (Typ.) | |
| HSBA0048 | Continuous Source Current (IS) | 48 | A | 1,5,6 |
| Diode Forward Voltage (VSD) | 1.1 | V | VGS=0V , IS=1A , TJ=25 (Typ.) | |
| Reverse Recovery Time (trr) | 33 | nS | IF=13.5A , di/dt=100A/µs , TJ=25 (Typ.) |
2410121655_HUASHUO-HSBA0048_C508832.pdf
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