N Channel Power MOSFET Guangdong Hottech HKTD7N65 650V 7A Continuous Drain Current 7A Component
Key Attributes
Model Number:
HKTD7N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
1.3Ω@10V,1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
10pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
27.2W
Input Capacitance(Ciss):
1.12nF
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
HKTD7N65
Package:
TO-252
Product Description
Product Overview
The HKTD7N65 is an N-CHANNEL Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance and fully characterized avalanche voltage and current. It is suitable for various power applications requiring high voltage and current capabilities.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Model: HKTD7N65
- Case Material: Molded Plastic
- Flammability: UL 94V-0
- Origin: Shenzhen, China
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-source voltage | VDS | 650 | V | |||
| Gate-source voltage | VGS | ±30 | V | |||
| Continuous drain current | ID | VGS=10V | 7 | A | ||
| Pulsed drain current | IDM | (Note 1) | 28 | A | ||
| Power dissipation | PD | 100 | W | |||
| Thermal resistance from junction to ambient | RθJA | 550 | °C/W | |||
| Operating junction and storage temperature | TJ,TSTG | -55~+150 | °C | |||
| Single Pulsed Avalanche Energy | EAS | (note 1) | 26 | mJ | ||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10s) | 260 | °C | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 650 | -- | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS = 650V, VGS = 0V, TJ = 25ºC | -- | -- | 100 | nA |
| Gate-Source Leakage | IGSS | VGS = ±30V | -- | -- | ±100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 2.0 | -- | 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID =1A (Note3) | -- | 1.08 | 1.3 | Ω |
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1.0MHz | -- | 1120 | -- | pF |
| Output Capacitance | Coss | -- | 90 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 10 | -- | pF | |
| Total Gate Charge | Qg | VDD = 325V, ID = 7A, VGS = 10V | -- | 20 | -- | nC |
| Gate-Source Charge | Qgs | -- | 5 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 5 | -- | nC | |
| Turn-on Delay Time | td(on) | VDD = 325V, ID = 7A, RG = 4.7Ω | -- | 12 | -- | ns |
| Turn-on Rise Time | tr | -- | 12 | -- | ns | |
| Turn-off Delay Time | td(off) | -- | 18 | -- | ns | |
| Turn-off Fall Time | tf | -- | 10 | -- | ns | |
| Continuous Body Diode Current | IS | TC = 25 ºC | -- | -- | 7 | A |
| Pulsed Diode Forward Current | ISM | -- | -- | 28 | A | |
| Body Diode Voltage | VSD | TJ = 25ºC, ISD = 1.0A, VGS = 0V | -- | -- | 0.9 | V |
| Reverse Recovery Time | trr | VGS = 0V,IS = 7.0A, diF/dt =100A /μs | -- | 350 | -- | ns |
| Reverse Recovery Charge | Qrr | -- | 1.1 | -- | μC | |
2410121807_Guangdong-Hottech-HKTD7N65_C5364288.pdf
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