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quality Dual N Channel 100V Fast Switching MOSFET HUASHUO HSM0228 with Low Gate Charge and Trench Technology factory
quality Dual N Channel 100V Fast Switching MOSFET HUASHUO HSM0228 with Low Gate Charge and Trench Technology factory

Dual N Channel 100V Fast Switching MOSFET HUASHUO HSM0228 with Low Gate Charge and Trench Technology

Key Attributes
Model Number: HSM0228
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
68mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
2.5V
Number:
2 N-Channel
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
HSM0228
Package:
SOP-8
Product Description

Product Overview

The HSM0228 is a dual N-channel, 100V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. It is available as a Green Device and features super low gate charge and excellent Cdv/dt effect decline.

Product Attributes

  • Brand: HS-Semi
  • Product Type: Dual N-Channel MOSFET
  • Voltage Rating: 100V
  • Switching Speed: Fast Switching
  • Technology: Trench Technology
  • Certifications: RoHS, Green Product
  • Availability: Green Device Available

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Units
HSM0228 Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=250uA 100 --- --- V
BVDSS Temperature Coefficient Reference to 25 , ID=1mA --- 0.122 --- V/
Static Drain-Source On-Resistance (RDS(ON)) VGS=10V , ID=4A --- --- 68 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=4.5V , ID=3A --- --- 94 m
Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =250uA 1.2 --- 2.5 V
VGS(th) Temperature Coefficient --- --- -4.84 --- mV/
Drain-Source Leakage Current (IDSS) VDS=80V , VGS=0V , TJ=25 --- --- 10 uA
Drain-Source Leakage Current (IDSS) VDS=80V , VGS=0V , TJ=55 --- --- 100 uA
Gate-Source Leakage Current (IGSS) VGS=20V , VDS=0V --- --- 100 nA
Forward Transconductance (gfs) VDS=5V , ID=4A --- 14 --- S
Total Gate Charge (Qg) (10V) VDS=50V , VGS=10V , ID=4A --- 12 --- nC
Gate-Source Charge (Qgs) --- --- 2.7 --- nC
Gate-Drain Charge (Qgd) --- --- 1.7 --- nC
Continuous Source Current (IS) VG=VD=0V , Force Current --- --- 2.5 A
Pulsed Source Current (ISM) --- --- --- 25 A
Diode Forward Voltage (VSD) VGS=0V , IS=1A , TJ=25 --- --- 1.2 V
HSM0228 Continuous Drain Current (ID@TA=25) VGS @ 10V --- --- 4 A
Continuous Drain Current (ID@TA=70) VGS @ 10V --- --- 3 A
Pulsed Drain Current (IDM) --- --- --- 25 A
Total Power Dissipation (PD@TA=25) --- --- --- 1.5 W
Thermal Resistance Junction-ambient (RJA) --- --- --- 90 /W
HSM0228 Thermal Resistance Junction-Case (RJC) --- --- --- 40 /W
Storage Temperature Range (TSTG) --- -55 --- 150
HSM0228 Operating Junction Temperature Range (TJ) --- -55 --- 150
Parameter Conditions Typ. Max. Units
Input Capacitance (Ciss) VDS=25V , VGS=0V , f=1MHz 620 --- pF
Output Capacitance (Coss) --- 105 --- pF
Reverse Transfer Capacitance (Crss) --- 63 --- pF
Turn-On Delay Time (Td(on)) VDD=50V , VGS=10V , RG=3 , ID=4A 3.8 --- ns
Rise Time (Tr) --- 26 --- ns
Turn-Off Delay Time (Td(off)) --- 16 --- ns
Fall Time (Tf) --- 8.8 --- ns
Part Number Package Code Packaging Quantity
HSM0228 SOP-8 Tape&Reel 2500

2410121642_HUASHUO-HSM0228_C700995.pdf
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