High reliability N Channel MOSFET Guangdong Hottech SI2302 with low on resistance and compact design
Key Attributes
Model Number:
SI2302
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@2.5V,3.1A
Gate Threshold Voltage (Vgs(th)):
1.2V@50uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
45pF
Number:
-
Input Capacitance(Ciss):
237pF
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2302
Package:
SOT-23
Product Description
Product Overview
This N-Channel MOSFET is designed for low voltage applications, featuring ultra-low on-resistance and suitability for DC to DC converters and load switch applications. It is a surface mount device in a SOT-23 package.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
- Origin: China
- Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Drain-Source breakdown voltage | V(BR)DSS | 20 | V | VGS=0V, ID=10A | ||
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=20V, VGS=0V | ||
| Gate-body leakage current | IGSS | 100 | nA | VDS=0V, VGS=10V | ||
| Gate-threshold voltage | VGS(th) | 0.4 | 1.2 | V | VDS=VGS, ID=250A | |
| Drain-source on-resistance | RDS(ON) | 40 | 55 | m | VGS=4.5V, ID=3.0A | |
| Drain-source on-resistance | RDS(ON) | 55 | 80 | m | VGS=2.5V, ID=2.0A | |
| Forward transconductance | gFS | 8.5 | S | VDS=5V, ID=3.0A | ||
| Input capacitance | Ciss | 237 | pF | VDS=10V, VGS=0V, f=1MHz | ||
| Output capacitance | Coss | 80 | pF | VDS=10V, VGS=0V, f=1MHz | ||
| Reverse transfer capacitance | Crss | 35 | pF | VDS=10V, VGS=0V, f=1MHz | ||
| Turn-on delay time | td(on) | 23 | nS | VDD=10V, VGS=4.5V, RGEN=6 | ||
| Turn-on rise time | tr | 11 | nS | VDD=10V, VGS=4.5V, RGEN=6 | ||
| Turn-off delay time | td(off) | 34 | nS | VDD=10V, VGS=4.5V, RGEN=6 | ||
| Turn-off fall time | tf | 36 | nS | VDD=10V, VGS=4.5V, RGEN=6 | ||
| Total gate charge | Qg | 2.7 | nC | VDD=10V,VGS=4.5V,ID=3.0A | ||
| Gate-source charge | Qgs | 0.4 | nC | VDD=10V,VGS=4.5V,ID=3.0A | ||
| Gate-drain charge | Qg | 0.8 | nC | VDD=10V,VGS=4.5V,ID=3.0A | ||
| Diode forward voltage | VSD | 1.2 | V | IS=3.0A, VGS=0V | ||
| Diode forward current | IS | 3.0 | A | |||
| Continuous drain current | ID | 3 | A | TA=25C | ||
| Pulsed drain current | IDM | 12 | A | TA=25C (Note 1) | ||
| Power dissipation | PD | 1.0 | W | TA=25C | ||
| Thermal resistance from Junction to ambient | RJA | 125 | C/W | |||
| Junction temperature | TJ | 150 | C | |||
| Storage temperature | TSTG | -55 | +150 | C |
2512261708_Guangdong-Hottech-SI2302_C181087.pdf
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