N Channel MOSFET Guangdong Hottech HKTD4N50 with 1.7 Milliohm RDS on and UL 94V 0 Rated TO 252 Package
Key Attributes
Model Number:
HKTD4N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
RDS(on):
1.7Ω@10V,1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
8.8pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
22W
Input Capacitance(Ciss):
460pF
Gate Charge(Qg):
14.5nC@10V
Mfr. Part #:
HKTD4N50
Package:
TO-252
Product Description
Product Overview
This N-CHANNEL Power MOSFET offers high performance with a 500V maximum drain-source voltage and 5A continuous drain current. It features a high-density cell design for ultra-low on-resistance and is fully characterized for avalanche voltage and current. The TO-252 package is constructed from molded plastic with UL flammability 94V-0 rating.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Model Marking: D4N50 A HKTD4N50
- Origin: Shenzhen, China
- Material: Molded Plastic (Case)
- Certifications: UL flammability 94V-0
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions |
| Drain-Source Breakdown Voltage | V(BR)DSS | 500 | V | VGS = 0V, ID = 250A |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 30V |
| Gate-Source Threshold Voltage | VGS(th) | 2.0 - 4.0 | V | VDS = VGS, ID = 250A |
| Drain-Source On-Resistance | RDS(on) | 1.7 | VGS = 10V, ID = 1A | |
| Input Capacitance | Ciss | 460 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| Output Capacitance | Coss | 55.2 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 8.8 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| Total Gate Charge | Qg | 14.5 | nC | VDD = 400V, ID = 5A, VGS = 10V |
| Continuous Body Diode Current | IS | 5 | A | TC = 25 C |
| Pulsed Diode Forward Current | ISM | 20 | A | |
| Body Diode Voltage | VSD | 0.9 | V | TJ = 25C, ISD = 1.0A, VGS = 0V |
| Reverse Recovery Time | trr | 220 | ns | VGS = 0V, IS = 5.0A, diF/dt =100A /s |
| Reverse Recovery Charge | Qrr | 3 | C | VGS = 0V, IS = 5.0A, diF/dt =100A /s |
| Continuous Drain Current | ID | 5 | A | VGS=10V |
| Pulsed Drain Current | IDM | 20 | A | |
| Power Dissipation | PD | 22 | W | |
| Thermal Resistance (Junction to Ambient) | RJA | 100 | C/W | |
| Operating Junction and Storage Temperature | TJ,TSTG | -55~+150 | C | |
| Single Pulsed Avalanche Energy | EAS | 10 | mJ | VDD=20V,L=0.5mH, RG=25, Starting TJ = 25C, ID=1A |
| Lead Temperature for Soldering | TL | 260 | C | (1/8 from case for 10s) |
2410121503_Guangdong-Hottech-HKTD4N50_C5364284.pdf
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