Hangzhou Silan Microelectronics SVF12N60F power MOSFET optimized for DC DC converters and AC DC power supplies
Key Attributes
Model Number:
SVF12N60F
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
580mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Output Capacitance(Coss):
152pF
Input Capacitance(Ciss):
1.367nF
Pd - Power Dissipation:
51W
Gate Charge(Qg):
34nC@10V
Mfr. Part #:
SVF12N60F
Package:
TO-220F-3
Product Description
Product Overview
The SVF12N60F/S/K is an N-channel enhancement mode power MOS field effect transistor from Silan Microelectronics, utilizing proprietary F-CellTM structure VDMOS technology. This design offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free, Halogen free
Technical Specifications
| Part Number | Package | 12A, 600V, RDS(on)(typ.)@VGS=10V | Low Gate Charge | Low Crss | Fast Switching | Improved dv/dt Capability | Packing Type |
| SVF12N60F | TO-220F-3L | 0.58 | Yes | Yes | Yes | Yes | Tube |
| SVF12N60S | TO-263-2L | 0.58 | Yes | Yes | Yes | Yes | Tube |
| SVF12N60STR | TO-263-2L | 0.58 | Yes | Yes | Yes | Yes | Tape&Reel |
| SVF12N60K | TO-262-3L | 0.58 | Yes | Yes | Yes | Yes | Tube |
| Characteristics | Symbol | SVF12N60F | SVF12N60S | SVF12N60K | Unit |
| Drain-Source Voltage | VDS | 600 | 600 | 600 | V |
| Gate-Source Voltage | VGS | 30 | 30 | 30 | V |
| Drain Current @ TC=25C | ID | 12 | 12 | 12 | A |
| Drain Current @ TC=100C | ID | 7.6 | 7.6 | 7.6 | A |
| Drain Current Pulsed | IDM | 48 | 48 | 48 | A |
| Power Dissipation (TC=25C) | PD | 51 | 180 | 213 | W |
| Derate above 25C | 0.41 | 1.44 | 1.7 | W/C | |
| Single Pulsed Avalanche Energy (Note 1) | EAS | 798 | 798 | 798 | mJ |
| Reverse Diode dv/dt (Note 2) | dv/dt | 4.5 | 4.5 | 4.5 | V/ns |
| MOSFET dv/dt Ruggedness (Note 3) | dv/dt | 50 | 50 | 50 | V/ns |
| Operation Junction Temperature Range | TJ | -55+150 | -55+150 | -55+150 | C |
| Storage Temperature Range | Tstg | -55+150 | -55+150 | -55+150 | C |
| Characteristics | Symbol | SVF12N60F | SVF12N60S | SVF12N60K | Unit |
| Thermal Resistance, Junction-to-Case | RJC | 2.44 | 0.69 | 0.59 | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | 62.5 | 62.5 | C/W |
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| Drain -Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 600 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=600V, VGS=0V | -- | -- | 1.0 | A |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain- Source On State Resistance | RDS(on) | VGS=10V, ID=6.0A | -- | 0.58 | 0.75 | |
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHz | -- | 1367 | -- | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, f=1.0MHz | -- | 152 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, f=1.0MHz | -- | 14 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=300V,ID=12A, VGS=10V ,RG=24 (Note 4,5) | -- | 24 | -- | ns |
| Turn-on Rise Time | tr | VDD=300V,ID=12A, VGS=10V ,RG=24 (Note 4,5) | -- | 52 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=300V,ID=12A, VGS=10V ,RG=24 (Note 4,5) | -- | 88 | -- | ns |
| Turn-off Fall Time | tf | VDD=300V,ID=12A, VGS=10V ,RG=24 (Note 4,5) | -- | 48 | -- | ns |
| Total Gate Charge | Qg | VDS=480V, ID=12A, VGS=10V (Note 4,5) | -- | 34 | -- | nC |
| Gate-Source Charge | Qgs | VDS=480V, ID=12A, VGS=10V (Note 4,5) | -- | 7.6 | -- | |
| Gate-Drain Charge | Qg | VDS=480V, ID=12A, VGS=10V (Note 4,5) | -- | 15 | -- |
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| Continuous Source Current | IS | -- | -- | 12 | A | |
| Pulsed Source Current | ISM | -- | -- | 48 | ||
| Diode Forward Voltage | VSD | IS=12A,VGS=0V | -- | -- | 1.3 | V |
| Reverse Recovery Time | Trr | IS=12A,VGS=0V, dIF/dt=100A/S (Note 4) | -- | 530 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=12A,VGS=0V, dIF/dt=100A/S (Note 4) | -- | 4.8 | -- | C |
2501091111_Hangzhou-Silan-Microelectronics-SVF12N60F_C403816.pdf
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