Hangzhou Silan Microelectronics SVF12N65F Power MOSFET Featuring TO 220F 3L Package and 0.64 Ohm RDS
Key Attributes
Model Number:
SVF12N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
640mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.39nF
Output Capacitance(Coss):
156pF
Pd - Power Dissipation:
51W
Gate Charge(Qg):
33nC@10V
Mfr. Part #:
SVF12N65F
Package:
TO-220F
Product Description
Product Overview
The SVF12N65F/K/S is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. This advanced technology minimizes on-state resistance, enhances switching performance, and improves robustness against high energy pulses in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Certifications: Pb free, Halogen free
Technical Specifications
| Part Number | Package | Drain-Source Voltage (V) | Gate-Source Voltage (V) | Drain Current (A) TC=25C | RDS(on)(typ.) () @VGS=10V | Power Dissipation (W) TC=25C | Single Pulsed Avalanche Energy (mJ) | Thermal Resistance Junction-to-Case (C/W) |
| SVF12N65F | TO-220F-3L | 650 | 30 | 12 | 0.64 | 51 | 790 | 2.44 |
| SVF12N65K | TO-262-3L | 650 | 30 | 12 | 0.64 | 209 | 790 | 0.6 |
| SVF12N65S | TO-263-2L | 650 | 30 | 12 | 0.64 | 210 | 790 | 0.60 |
2501091110_Hangzhou-Silan-Microelectronics-SVF12N65F_C18781.pdf
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