Power management MOSFET HUASHUO HSBA3056 N Channel 30V Fast Switching with advanced Trench technology
Key Attributes
Model Number:
HSBA3056
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
73A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.9mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
70pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.476nF@15V
Pd - Power Dissipation:
38W
Gate Charge(Qg):
14.6nC@4.5V
Mfr. Part #:
HSBA3056
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA3056 is a N-Channel 30V Fast Switching MOSFET designed for efficient power management. It features advanced high cell density Trench technology, offering super low gate charge and excellent CdV/dt effect decline. This MOSFET is ideal for power management in desktop computers, isolated DC/DC converters in telecom and industrial applications, and general DC/DC converters. It is 100% EAS guaranteed and available as a Green Device.
Product Attributes
- Brand: HS-Semi
- Type: N-Channel MOSFET
- Technology: Trench
- Certification: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||||
| VDS | Drain-Source Voltage | 30 | V | ||||
| VGS | Gate-Source Voltage | 20 | V | ||||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 73 | A | ||||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 46 | A | ||||
| IDM | Pulsed Drain Current2 | 120 | A | ||||
| EAS | Single Pulse Avalanche Energy3 | 80 | mJ | ||||
| IAS | Avalanche Current | 40 | A | ||||
| PD@TC=25 | Total Power Dissipation4 | 38 | W | ||||
| TSTG | Storage Temperature Range | -55 | 150 | ||||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||||
| Thermal Data | |||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 55 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | --- | 3.3 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V | |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.021 | --- | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | --- | 3.2 | 3.9 | m | |
| VGS=4.5V , ID=15A | --- | 4.9 | 6.1 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.7 | 2.2 | V | |
| VGS(th) | VGS(th) Temperature Coefficient | -5.73 | --- | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | 1 | uA | ||
| VDS=24V , VGS=0V , TJ=55 | --- | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=20A | 75 | --- | S | ||
| Rg | Gate Resistance | VDS=10V , VGS=0V , f=1MHz | 0.7 | 1.65 | 2.6 | ||
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=20A | 14.6 | --- | nC | ||
| Qgs | Gate-Source Charge | 5.8 | --- | nC | |||
| Qgd | Gate-Drain Charge | 3.5 | --- | nC | |||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3 ID=20A | 7.5 | --- | ns | ||
| Tr | Rise Time | 20.1 | --- | ns | |||
| Td(off) | Turn-Off Delay Time | 21.6 | --- | ns | |||
| Tf | Fall Time | 4.4 | --- | ns | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 1476 | --- | pF | ||
| Coss | Output Capacitance | 556 | --- | pF | |||
| Crss | Reverse Transfer Capacitance | 70 | --- | pF | |||
| Diode Characteristics | |||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 30 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | ||
Applications
- Power Management in Desktop Computer or DC/DC Converters
- Isolated DC/DC Converters in Telecom and Industrial
Features
- 100% EAS Guaranteed
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBA3056 | PRPAK5*6 | 3000/Tape&Reel |
2410121503_HUASHUO-HSBA3056_C701049.pdf
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