Load Switching Power MOSFET Guangdong Hottech HKTQ30N03 Featuring Trench Technology and Low Gate Charge
Key Attributes
Model Number:
HKTQ30N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-50℃~+150℃
RDS(on):
9.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 N-channel
Pd - Power Dissipation:
21W
Input Capacitance(Ciss):
1.015nF@15V
Gate Charge(Qg):
23nC@15V
Mfr. Part #:
HKTQ30N03
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The v4.0 N-Channel Enhancement Mode Power MOSFET utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications including high current load applications, load switching, hard switched and high frequency circuits, and uninterruptible power supplies. Its high density cell design ensures ultra low RDS(ON), and it is fully characterized for avalanche voltage and current with good stability and uniformity.
Product Attributes
- Brand: HKT
- Part ID: HKTQ30N03
- Package: PDFN3*3-8L
- Marking: Q30N03
- Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | TC=25 | 30 | A | ||
| Drain Current-Continuous(TC=100) | ID (100 ) | 21 | A | |||
| Pulsed Drain Current (Note 1) | IDM | 115 | A | |||
| Maximum Power Dissipation | PD | 21 | W | |||
| Single pulse avalanche energy (Note 5) | EAS | 200 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -50 | 150 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case(Note 2) | RJC | 7.1 | ℃/W | |||
| Electrical Characteristics (TC=25unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 5.3 | 8.0 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=15A | 5.3 | 9.8 | m℆ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=15A | 14.0 | m℆ | ||
| Forward Transconductance | gFS | VDS=5V,ID=20A | 20 | S | ||
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | VDS=15V,VGS=0V, F=1.0MHz | 160 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V, F=1.0MHz | 200 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V, F=1.0MHz | 101.5 | pF | ||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=20V,I D=2A, VGS=10V,RGEN=3 ℆ | 7 | nS | ||
| Turn-on Rise Time | tr | VDD=20V,I D=2A, VGS=10V,RGEN=3 ℆ | 19 | nS | ||
| Turn-Off Delay Time | td(off) | VDD=20V,I D=2A, VGS=10V,RGEN=3 ℆ | 24 | nS | ||
| Turn-Off Fall Time | tf | VDD=20V,I D=2A, VGS=10V,RGEN=3 ℆ | 2.5 | nS | ||
| Total Gate Charge | Qg | VDS=15V,ID=20A, VGS=10V | 23 | nC | ||
| Gate-Source Charge | Qgs | VDS=15V,ID=20A, VGS=10V | 3.9 | nC | ||
| Gate-Drain Charge | Qg d | VDS=15V,ID=20A, VGS=10V | 7 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=15A | 0.82 | 1.2 | V | |
| Diode Forward Current (Note 2) | IS | 30 | A | |||
| Reverse Recovery Time | trr | I SD = 15A, di/dt =100A/ μs(Note3) | 5 | nS | ||
| Reverse Recovery Charge | Qrr | I SD = 15A, di/dt =100A/ μs(Note3) | 0.2 | nC | ||
| Forward Turn-On Time | ton | 1.5 | - | |||
2410121815_Guangdong-Hottech-HKTQ30N03_C5364299.pdf
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