High density cell Guangdong Hottech HKTD70N04 N Channel Power MOSFET for power conversion solutions
Key Attributes
Model Number:
HKTD70N04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
70A
RDS(on):
9.5mΩ@10V,15A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
188pF@20V
Number:
1 N-channel
Pd - Power Dissipation:
108W
Input Capacitance(Ciss):
4.3nF
Gate Charge(Qg):
-
Mfr. Part #:
HKTD70N04
Package:
TO-252
Product Description
Product Overview
The HKTD70N04 is a high-performance N-Channel Power MOSFET designed for demanding applications. It features a high-density cell design for ultra-low on-resistance and is fully characterized for avalanche voltage and current. This MOSFET is housed in a TO-252 package, offering a robust solution for power management needs.
Product Attributes
- Brand: HOTTECH
- Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Material: Molded Plastic
- Flammability: UL 94V-0
- Marking: D70N04
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | |
| Off Characteristics | Drain-Source breakdown voltage | V(BR)DS | 40 | V | VGS=0V,ID=250A | ||
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=40V, VGS=0V | |||
| Gate-body leakage current | IGSS | 100 | nA | VDS=0V, VGS=20V | |||
| Gate-threshold voltage | VGS(th) | 1.0 | 1.4 | 2.0 | V | VDS=VGS, ID=250A | |
| Drain-source on-resistance | RDS(ON) | 7.5 | 9.5 | m | VGS=10V, ID=15A | ||
| On Characteristics | Forward transconductance | gFS | 10 | 13.5 | S | VDS=5V,ID=70A | |
| Drain-source on-resistance | RDS(ON) | 9.5 | m | VGS=10V | |||
| Drain-source on-resistance | RDS(ON) | 9.5 | m | VGS=10V, ID=15A | |||
| Dynamic Characteristics | Input capacitance | Ciss | 4300 | pF | VGS=0V VDS=20V f=1.0MHz | ||
| Output capacitance | Coss | 250 | pF | ||||
| Reverse transfer capacitance | Crss | 188 | pF | ||||
| Switching Characteristics | Turn-on delay time | td(on) | 7 | ns | VDD=20V ID=20A RG=3 | ||
| Turn-on rise time | tr | 5 | ns | ||||
| Turn-off delay time | td(off) | 25 | ns | ||||
| Turn-off fall time | tf | 5 | ns | ||||
| Gate Charge | Total gate charge | Qg | 58 | nC | VDS=20V,VGS=10V, ID=20A | ||
| Gate-source charge | Qgs | 10 | nC | ||||
| Gate-drain charge | Qg d | 10 | nC | ||||
| Drain-source diode characteristics | Diode forward voltage | VSD | 1.2 | V | IS=20A,VGS=0V | ||
| Max. forward current | IS | 70 | A | ||||
| Maximum Ratings | Drain-source voltage | VDS | 40 | V | |||
| Gate-source voltage | VGS | 20 | V | ||||
| Continuous drain current | ID | 70 | A | ||||
| Pulsed drain current | IDM | 280 | A | (Note 1) | |||
| Power dissipation | PD | 60 | W | ||||
| Single Pulsed Avalanche Energy | EAS | 66 | mJ | (note 1) | |||
| Lead Temperature for Soldering | TL | 260 | C | (1/8 from case for 10s) | |||
| Thermal Resistance | Thermal resistance from junction to ambient | RJA | 60 | C/W | |||
| Temperature Ratings | Operating junction and storage temperature | TJ,TSTG | -55 | +150 | C |
2410121503_Guangdong-Hottech-HKTD70N04_C5364293.pdf
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