Low On Resistance Dual N Channel Enhancement Mode Transistor Guangdong Hottech AO4812 in SOP 8 Package for Power Conversion
Key Attributes
Model Number:
AO4812
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.9A
RDS(on):
28mΩ@10V,6.9A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
2 N-Channel
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
820pF@15V
Gate Charge(Qg):
17nC@4.5V
Mfr. Part #:
AO4812
Package:
SOP-8
Product Description
Product Overview
The AO4812 is a Dual N-Channel Enhancement Mode Field Effect Transistor designed for synchronous rectifier applications. It features low on-resistance, low gate charge, and is available in a surface mount SOP-8 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Origin: Not specified
- Material: Molded Plastic (UL 94V-0)
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Drain-Source breakdown voltage | V(BR)DSS* | 30 | V | VGS=0V, ID=250A | ||
| Zero gate voltage drain current | IDSS* | 1 | A | VDS=24V, VGS=0V | ||
| Gate-body leakage current | IGSS* | 100 | nA | VDS=0V, VGS=20V | ||
| Gate-threshold voltage | VGS(th)* | 1 | 1.9 | 3 | V | VDS=VGS, ID=250A |
| On-State Drain Current | ID(ON)* | 20 | A | VDS=5V, VGS=4.5V | ||
| Drain-source on-resistance | RDS(ON)* | 22.5 | 28 | m | VGS=10V, ID=6.9A | |
| 31.3 | 38 | VGS=10V, ID=6.9A, TJ=125C | ||||
| 34.5 | 42 | m | VGS=4.5V, ID=5A | |||
| Forward transconductance | gFS | 10 | 15.4 | S | VDS=5V, ID=5A | |
| Diode forward voltage | VSD | 0.76 | 1 | V | IS=1A, VGS=0V | |
| Diode forward current | IS | 3 | A | |||
| Input capacitance | Ciss | 680 | 820 | pF | VDS=15V, VGS=0V, f=1MHz | |
| Output capacitance | Coss | 102 | pF | |||
| Reverse transfer capacitance | Crss | 77 | pF | |||
| Gate resistance | Rg | 3 | 3.6 | VDS=0V, VGS=0V, f=1MHz | ||
| Total gate charge | Qg | 6.74 | 8.1 | nC | VGS=4.5V,VDS=15V,ID=6.9A | |
| 13.84 | 17 | nC | VGS=10V,VDS=15V,ID=6.9A | |||
| Gate-source charge | Qgs | 1.82 | nC | |||
| Gate-drain charge | Qgd | 3.2 | nC | |||
| Turn-on delay time | td(on) | 4.6 | 7 | nS | VGS=10V, VDS=15V, RGEN=3,RL=2.2 | |
| Turn-on rise time | tr | 4.1 | 6.2 | nS | ||
| Turn-off delay time | td(off) | 20.6 | 30 | nS | ||
| Turn-off fall time | tf | 5.2 | 7.5 | nS | ||
| Body Diode Reverse Recovery Time | trr | 16.5 | 20 | nS | IF=6.9A, dI/dt=100A/ s | |
| Body Diode Reverse Recovery Charge | Qrr | 7.8 | 10 | nC | IF=6.9A, dI/dt=100A/ s | |
| Drain-source voltage | VDS | 30 | V | |||
| Gate-source voltage | VGS | 20 | V | |||
| Continuous drain current | ID | 6.9 | A | TA = 25C | ||
| 5.8 | A | TA = 70C | ||||
| Pulsed drain current | IDM | 30 | A | |||
| Power dissipation | PD | 2 | W | TA = 25C | ||
| 1.44 | W | TA = 70C | ||||
| Thermal resistance from Junction to ambient | RJA | 110 | C/W | |||
| Thermal resistance from Junction to Lead | RJL | 40 | C/W | |||
| Junction temperature | TJ | 150 | C | |||
| Storage temperature | TSTG | -55 | ~+150 | C |
2409302200_Guangdong-Hottech-AO4812_C5364283.pdf
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