Low On Resistance and Low Gate Charge Guangdong Hottech S8205A Dual N Channel Field Effect Transistor
Key Attributes
Model Number:
S8205A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-
RDS(on):
25mΩ@4V,5A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
2 N-Channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
800pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
11nC@4V
Mfr. Part #:
S8205A
Package:
SOT-23-6
Product Description
Product Overview
The S8205A is a Dual N-Channel Enhancement Mode Field Effect Transistor designed for synchronous rectifier applications. It features low on-resistance, low gate charge, and is available in a surface mount SOT-23-6 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- Classification Rating: UL 94V-0
- Email: hkt@heketai.com
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Drain-Source breakdown voltage | V(BR)DSS* | 20 | V | VGS=0V, ID=250A | ||
| Zero gate voltage drain current | IDSS* | 1 | A | VDS=16V, VGS=0V | ||
| Gate-body leakage current | IGSS* | 100 | nA | VDS=0V, VGS=12V | ||
| Gate-threshold voltage | VGS(th)* | 0.5 | 0.8 | 1.0 | V | VDS=VGS, ID=250A |
| Drain-source on-resistance | RDS(ON)* | 22 | 25 | m | VGS=4V, ID=5A | |
| Drain-source on-resistance | RDS(ON)* | 38 | 40 | m | VGS=2.5V, ID=4A | |
| Forward transconductance | gFS | 13 | S | VDS=5V, ID=5A | ||
| Diode forward voltage | VSD | 0.42 | 1.28 | V | IS=1.7A, VGS=0V | |
| Input capacitance | Ciss | 800 | pF | VDS=8V, VGS=0V, f=1MHz | ||
| Output capacitance | Coss | 155 | pF | VDS=8V, VGS=0V, f=1MHz | ||
| Reverse transfer capacitance | Crss | 125 | pF | VDS=8V, VGS=0V, f=1MHz | ||
| Total gate charge | Qg | 11 | nC | VGS=4V,VDS=10V,ID=4A | ||
| Gate-source charge | Qgs | 2.2 | nC | VGS=4V,VDS=10V,ID=4A | ||
| Gate-drain charge | Qg d | 2.5 | nC | VGS=4V,VDS=10V,ID=4A | ||
| Turn-on delay time | td(on) | 18.3 | nS | VDD=10V, ID=1.0A,VGEN=4V, RGEN=10,RL=10 | ||
| Turn-on rise time | tr | 4.8 | nS | VDD=10V, ID=1.0A,VGEN=4V, RGEN=10,RL=10 | ||
| Turn-off delay time | td(off) | 43.5 | nS | VDD=10V, ID=1.0A,VGEN=4V, RGEN=10,RL=10 | ||
| Turn-off fall time | tf | 20 | nS | VDD=10V, ID=1.0A,VGEN=4V, RGEN=10,RL=10 | ||
| Drain-source voltage | VDS | 20 | V | |||
| Gate-source voltage | VGS | 12 | V | |||
| Continuous drain current @TA = 25C | ID | 5 | A | |||
| Pulsed drain current | IDM | 25 | A | |||
| Power dissipation | PD | 1.25 | W | |||
| Thermal resistance from Junction to ambient | RJA | 100 | C/W | |||
| Junction and Storage temperature Range | TJ,TSTG | -55 | ~ | +150 | C |
2410121959_Guangdong-Hottech-S8205A_C181097.pdf
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