Power MOSFET Guangdong Hottech APM4953 Featuring Low Gate Charge and High Current Handling Capability
Key Attributes
Model Number:
APM4953
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
105mΩ@4.5V,4.2A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Number:
2 P-Channel
Input Capacitance(Ciss):
520pF
Output Capacitance(Coss):
130pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
APM4953
Package:
SOP-8-150mil
Product Description
Product Overview
The 4953 is a P-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is well-suited for load switch and PWM applications, providing high power and current handling capabilities.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
- Product Name: 4953
- Certifications: Lead free product is acquired
- Package: SOP-8
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| VDS | -30 | V | ||||
| ID | -5.1 | A | ||||
| RDS(ON) | VGS=-4.5V | 105 | m | |||
| RDS(ON) | VGS=-10V | 55 | m | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TA=25 | -30 | V | ||
| Gate-Source Voltage | VGS | TA=25 | 20 | V | ||
| Drain Current-Continuous | ID | TA=25 | -4.9 | A | ||
| Drain Current-Pulsed | IDM | (Note 1) | -20 | A | ||
| Maximum Power Dissipation | PD | TA=25 | 2 | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | (Note 2) | 50 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | -33 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V,VGS=0V | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -1 | -1.6 | -3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-5.1A | 48 | 55 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-4.2A | 73 | 105 | m | |
| Forward Transconductance | gFS | VDS=-15V,ID=-4.5A | 4 | 7 | S | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | 520 | PF | |||
| Output Capacitance | Coss | 130 | PF | |||
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V, F=1.0MHz | 70 | PF | ||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-1A, VGS=-10V,RGEN=6 | 7 | nS | ||
| Turn-on Rise Time | tr | VDD=-15V, ID=-1A, VGS=-10V,RGEN=6 | 13 | nS | ||
| Turn-Off Delay Time | td(off) | VDD=-15V, ID=-1A, VGS=-10V,RGEN=6 | 14 | nS | ||
| Turn-Off Fall Time | tf | VDD=-15V, ID=-1A, VGS=-10V,RGEN=6 | 9 | nS | ||
| Total Gate Charge | Qg | VDS=-15V,ID=-5.1A,VGS=-10V | 12 | nC | ||
| Gate-Source Charge | Qgs | VDS=-15V,ID=-5.1A,VGS=-10V | 2.2 | nC | ||
| Gate-Drain Charge | Qg | VDS=-15V,ID=-5.1A,VGS=-10V | 3 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-1.7A (Note 3) | -1.2 | V | ||
2410121440_Guangdong-Hottech-APM4953_C181099.pdf
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