Ultra high frequency low noise transistor GUOXIN JIAPIN SEMICONDUCTOR FC1407 ideal for radar oscillators above 4GHz
Key Attributes
Model Number:
FC1407
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
8.5GHz
Type:
NPN
Current - Collector(Ic):
20mA
Number:
1 NPN
Collector - Emitter Voltage VCEO:
8V
Mfr. Part #:
FC1407
Package:
SOT-323
Product Description
Product Overview
The FC1407 is an ultra-high frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Guoxin Jiapin Semiconductor Co., Ltd. It offers high power gain and low noise characteristics. Featuring an ultra-small SOT-323 package, it is ideal for high-density surface mount installations and is primarily used as an oscillator in radar modules above 4GHz.
Product Attributes
- Brand: Guoxin Jiapin Semiconductor Co., Ltd.
- Origin: China (implied by manufacturer name)
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Min | Typical | Max | Unit | Test Conditions |
| Collector-Base Breakdown Voltage | VCBO | 16 | V | IC=1.0A | ||
| Collector-Base Leakage Current | ICBO | 0.1 | A | VCB=10V | ||
| Emitter-Base Breakdown Voltage | VEBO | 1.5 | V | |||
| Emitter-Base Leakage Current | IEBO | 0.1 | A | VEB=1V | ||
| DC Current Gain | hFE | 60 | 150 | 300 | VCE=3V,IC=5mA | |
| Transition Frequency | fT | 8 | 8.5 | GHz | VCE=3V,IC=5mA,f=2GHz | |
| Output Feedback Capacitance | Cre | 0.65 | 1.0 | pF | VCB=10V,IE=0mA,f=1MHz | |
| Power Gain | | S21e |² | 5.5 | dB | VCE=3V,IC=5mA,f=2GHz | ||
| Noise Figure | NF | 2.0 | dB | VCE=3V,IC=5mA,f=2GHz | ||
| Collector Current (Absolute Max) | IC | 20 | mA | |||
| Power Dissipation (Absolute Max) | PC | 150 | mW | TA=25 | ||
| Junction Temperature (Absolute Max) | Tj | 150 | ||||
| Storage Temperature (Absolute Max) | Tstg | -65 | +150 |
2207271730_GUOXIN-JIAPIN-SEMICONDUCTOR-FC1407_C2992556.pdf
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