High gain NPN silicon epitaxial transistor GUOXIN JIAPIN SEMICONDUCTOR FC3356G designed for VHF UHF CATV amplifier circuits
Key Attributes
Model Number:
FC3356G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2.5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
7GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
FC3356G
Package:
SC-59
Product Description
Product Description
The FC3356G is a high-frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It features high power gain, low noise figure, wide dynamic range, and ideal current characteristics. Packaged in an SC-59 surface-mount package, it is primarily used in VHF, UHF, and CATV high-frequency broadband low-noise amplifiers.
Product Attributes
- Brand: (Guo Xin Jia Pin SEMICONDUTOR)
- Material: NPN Silicon Epitaxial Bipolar
- Packaging: SC-59
Technical Specifications
| Parameter | Symbol | Typical Value | Unit | Test Conditions |
| High Gain (|S21e|) | |S21e| | 11.5 | dB | VCE=10V, IC=20mA, f=1GHz |
| Low Noise Figure (NF) | NF | 1.3 | dB | VCE=10V, IC=7mA, f=1GHz |
| Gain Bandwidth Product (fT) | fT | 7 | GHz | VCE=10V, IC=20mA, f=1GHz |
| Collector-Base Breakdown Voltage | VCBO | 20 | V | IC=1.0A |
| Collector-Emitter Breakdown Voltage | VCEO | 12 | V | |
| Emitter-Base Breakdown Voltage | VEBO | 2.5 | V | |
| Collector Current | IC | 100 | mA | |
| Power Dissipation | PC | 200 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -65 ~ +150 | ||
| Collector-Base Leakage Current | ICBO | 0.1 | A | VCB=10V |
| Emitter-Base Leakage Current | IEBO | 0.1 | A | VEB=1V |
| DC Current Gain | HFE | 90 - 250 | VCE=10V,IC=20mA | |
| Output Feedback Capacitance | Cre | 0.65 | pF | VCB=10V,IE=0mA,f=1MHz |
2204211700_GUOXIN-JIAPIN-SEMICONDUCTOR-FC3356G_C2992560.pdf
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