Dual P channel 60V fast switching MOSFET HUASHUO HSM6303 for synchronous buck converter applications

Key Attributes
Model Number: HSM6303
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
70pF@15V
Number:
2 P-Channel
Input Capacitance(Ciss):
1.447nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
9.86nC@4.5V
Mfr. Part #:
HSM6303
Package:
SOP-8
Product Description

Product Overview

The HSM6303 is a dual P-channel, 60V fast-switching MOSFET designed for high-efficiency synchronous buck converter applications. Featuring high cell density trench technology, it offers excellent RDS(ON) and low gate charge, contributing to superior performance. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability approval. Its advanced design ensures excellent CdV/dt effect decline.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Channel MOSFET
  • Technology: Trench
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Units
HSM6303 Drain-Source Voltage (VDS) -60 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) VGS @ -10V, TA=25 -4 A
Continuous Drain Current (ID) VGS @ -10V, TA=70 -3 A
Pulsed Drain Current (IDM) -7.5 A
Single Pulse Avalanche Energy (EAS) 35.4 mJ
Avalanche Current (IAS) -26.6 A
Total Power Dissipation (PD) TA=25 1.5 W
Storage Temperature Range (TSTG) -55 150
Operating Junction Temperature Range (TJ) -55 150
Thermal Resistance Junction-Ambient (RJA) --- 85 /W
Thermal Resistance Junction-Case (RJC) --- 36 /W
Drain-Source Breakdown Voltage (BVDSS) VGS=0V, ID=-250uA -60 --- V
Static Drain-Source On-Resistance (RDS(ON)) VGS=-10V, ID=-3A 58 70 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=-4.5V, ID=-2A 75 105 m
Gate Threshold Voltage (VGS(th)) VGS=VDS, ID =-250uA -1.2 -2.5 V
Drain-Source Leakage Current (IDSS) VDS=-48V, VGS=0V, TJ=25 --- 1 uA

Note: Specific conditions and detailed electrical characteristics are available in the full datasheet.


2410121456_HUASHUO-HSM6303_C700993.pdf
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