P Channel MOSFET HUASHUO HSH40P15 Featuring 150V Drain Source Voltage and Advanced Trench Technology
Key Attributes
Model Number:
HSH40P15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
85mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
1.65V@250uA
Reverse Transfer Capacitance (Crss@Vds):
116pF@75V
Number:
1 P-Channel
Input Capacitance(Ciss):
8.6nF@75V
Pd - Power Dissipation:
57W
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
HSH40P15
Package:
TO-263
Product Description
Product Overview
The HSH40P15 is a P-Channel Fast Switching MOSFET featuring 150V drain-source voltage and advanced trench MOSFET technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HSH
- Product Type: P-Channel MOSFET
- Technology: Advanced Trench MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Parameter | Rating/Conditions | Units |
|---|---|---|
| Absolute Maximum Ratings | ||
| Drain-Source Voltage (VDS) | -150 | V |
| Gate-Source Voltage (VGS) | 20 | V |
| Continuous Drain Current (ID@TC=25, VGS @ -10V) | -40 | A |
| Continuous Drain Current (ID@TC=100, VGS @ -10V) | -23 | A |
| Pulsed Drain Current (IDM) | -120 | A |
| Single Pulse Avalanche Energy (EAS) | 420 | mJ |
| Avalanche Current (IAS) | -35 | A |
| Total Power Dissipation (PD@TC=25) | 100 | W |
| Storage Temperature Range (TSTG) | -55 to 150 | |
| Operating Junction Temperature Range (TJ) | -55 to 150 | |
| Thermal Data | ||
| Thermal Resistance Junction-Ambient (RJA) | --- 62 | /W |
| Thermal Resistance Junction-Case (RJC) | --- 1.22 | /W |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||
| Drain-Source Breakdown Voltage (BVDSS) (VGS=0V , ID=-250uA) | -150 --- --- | V |
| Static Drain-Source On-Resistance (RDS(ON),typ) (VGS=-10V , ID=-40A) | 85 | m |
| Static Drain-Source On-Resistance (RDS(ON)) (VGS=-10V , ID=-15A) | --- 85 100 | m |
| Static Drain-Source On-Resistance (RDS(ON)) (VGS=-4.5V , ID=-10A) | --- 90 110 | m |
| Gate Threshold Voltage (VGS(th)) (VGS=VDS , ID =-250uA) | -1 -1.65 -2.5 | V |
| Drain-Source Leakage Current (IDSS) (VDS=-150V , VGS=0V , TJ=25) | --- --- -1 | uA |
| Drain-Source Leakage Current (IDSS) (VDS=-150V , VGS=0V , TJ=125) | --- --- -100 | uA |
| Gate-Source Leakage Current (IGSS) (VGS=20V , VDS=0V) | --- --- 100 | nA |
| Forward Transconductance (gfs) (VDS=-5V , ID=-15A) | --- 44 --- | S |
| Gate Resistance (Rg) (VDS=0V , VGS=0V , f=1MHz) | --- 1.6 --- | |
| Total Gate Charge (Qg) (VDS=-75V , VGS=-10V , ID=-15A) | --- 120 --- | nC |
| Gate-Source Charge (Qgs) | --- 21 --- | nC |
| Gate-Drain Charge (Qgd) | --- 25 --- | nC |
| Turn-On Delay Time (Td(on)) (VDD=-75V , VGS=-10V , RG=6, ID=-15A) | --- 17 --- | ns |
| Rise Time (Tr) | --- 89 --- | ns |
| Turn-Off Delay Time (Td(off)) | --- 49 --- | ns |
| Fall Time (Tf) | --- 60 --- | ns |
| Input Capacitance (Ciss) (VDS=-75V , VGS=0V , f=1MHz) | --- 8600 --- | pF |
| Output Capacitance (Coss) | --- 155 --- | pF |
| Reverse Transfer Capacitance (Crss) | --- 116 --- | pF |
| Diode Characteristics | ||
| Continuous Source Current (IS) (VG=VD=0V , Force Current) | --- --- -40 | A |
| Diode Forward Voltage (VSD) (VGS=0V , IS=-1A , TJ=25) | --- --- -1.2 | V |
2504101957_HUASHUO-HSH40P15_C45385138.pdf
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