SOP 8 Package N P Channel MOSFET Hangzhou Silan Microelectronics SVD1055SATR for Switching Applications
Key Attributes
Model Number:
SVD1055SATR
Product Custom Attributes
Drain To Source Voltage:
55V
Current - Continuous Drain(Id):
17A
RDS(on):
175mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20.5pF
Input Capacitance(Ciss):
450pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
-
Mfr. Part #:
SVD1055SATR
Package:
SOP-8
Product Description
SVD1055SA N/P Channel Enhancement Mode Field Effect Transistor
The SVD1055SA is an N/P channel enhancement mode power MOSFET manufactured using Silan Microelectronics' low-voltage planar VDMOS process technology. Its advanced process and cell structure provide low on-resistance, superior switching performance, and high avalanche breakdown tolerance. This product is widely applicable in electronic ballasts and low-power switching power supplies.
Product Attributes
- Brand: Silan Microelectronics
- Origin: China
- Package Type: SOP-8-225-1.27
- Environmental Level: Halogen-free
- Packaging: Tube, Tape & Reel
Technical Specifications
| Parameter | Symbol | N-ch Typical | P-ch Typical | Unit | Notes |
| Absolute Maximum Ratings (TC=25C unless otherwise specified) | |||||
| Drain-Source Voltage | VDS | 55 | -55 | V | |
| Gate-Source Voltage | VGS | ±20 | ±20 | V | |
| Drain Current (TC=25C) | ID | 17 | -12 | A | |
| Drain Current (TC=100C) | ID | 12 | -8.5 | A | |
| Pulsed Drain Current | IDM | 68 | -48 | A | |
| Power Dissipation (TC=25C) | PD | 2.0 | W | ||
| Single Pulse Avalanche Energy | EAS | 122 | 106 | mJ | Note 1 |
| Operating Junction Temperature Range | TJ | -55+150 | °C | ||
| Storage Temperature Range | Tstg | -55+150 | °C | ||
| Electrical Characteristics (TC=25C unless otherwise specified) | |||||
| Drain-Source Breakdown Voltage | BVDSS | 55 | -55 | V | VGS=0V, ID=250µA (N-ch), ID=-250µA (P-ch) |
| Drain-Source Leakage Current | IDSS | 1 | -1 | µA | VDS=55V (N-ch), VDS=-55V (P-ch), VGS=0V |
| Gate-Source Leakage Current | IGSS | ±100 | ±100 | nA | VGS=±20V, VDS=0V |
| Gate Threshold Voltage | VGS(th) | 2.04.0 | -2.0-4.0 | V | VGS=VDS, ID=250µA (N-ch), ID=-250µA (P-ch) |
| Static Drain-Source On-Resistance | RDS(on) | 4570 | 145175 | mΩ | VGS=10V, ID=10A (N-ch); VGS=-10V, ID=-7.2A (P-ch) |
| Input Capacitance | Ciss | 386 | 461 | pF | VDS=25V (N-ch), VDS=-25V (P-ch), VGS=0V, f=1.0MHz |
| Output Capacitance | Coss | 147 | 144 | pF | VDS=25V (N-ch), VDS=-25V (P-ch), VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | 18 | 46 | pF | VDS=25V (N-ch), VDS=-25V (P-ch), VGS=0V, f=1.0MHz |
| Turn-on Delay Time | td(on) | 5.2 | 8.4 | ns | Note 2, 3 |
| Turn-on Rise Time | tr | 42 | 52 | ns | Note 2, 3 |
| Turn-off Delay Time | td(off) | 26 | 35 | ns | Note 2, 3 |
| Turn-off Fall Time | tf | 16 | 27 | ns | Note 2, 3 |
| Total Gate Charge | Qg | 11 | 14 | nC | Note 2, 3 |
| Gate-Source Charge | Qgs | 2.9 | 2.8 | nC | Note 2, 3 |
| Gate-Drain Charge | Qgd | 3.8 | 5.8 | nC | Note 2, 3 |
| Source Current | IS | 17 | -12 | A | Body Diode |
| Pulsed Source Current | ISM | 68 | -48 | A | Body Diode |
| Body Diode Forward Voltage | VSD | 1.3 | -1.6 | V | IS=10A (N-ch), IS=-7.2A (P-ch), VGS=0V |
| Body Diode Reverse Recovery Time | Trr | 42 | 54.33 | ns | Note 2 |
| Body Diode Reverse Recovery Charge | Qrr | 0.08 | 0.101 | µc | Note 2 |
Notes:
1. L=1mH, IAS=13A (N-ch), IAS=-8A (P-ch), VDD=25V, RG=25Ω, TJ=25°C.
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
3. Essentially unaffected by operating temperature.
2511110935_Hangzhou-Silan-Microelectronics-SVD1055SATR_C2761105.pdf
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