synchronous buck converter component HUASHUO HSBB1260 trenched N channel MOSFET with low gate charge
Key Attributes
Model Number:
HSBB1260
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
100A
RDS(on):
2.6mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
940pF
Number:
1 N-channel
Output Capacitance(Coss):
1.06nF
Input Capacitance(Ciss):
5.05nF
Pd - Power Dissipation:
62W
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
HSBB1260
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB1260 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge and suitability for battery protection and power management systems.
Product Attributes
- Brand: HS-Semi (implied by URL)
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 12 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 100 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 70 | A | |||
| IDM | Pulsed Drain Current2 | 400 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 300 | mJ | |||
| PD@TC=25 | Total Power Dissipation4 | 62 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient (Steady State)1 | --- | --- | 60 | /W | |
| RJC | Thermal Resistance Junction-Case1 | --- | --- | 2.0 | /W | |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 12 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25, ID=1mA | --- | 0.028 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A | --- | 1.8 | 2.2 | m |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=2.5V , ID=15A | --- | 2.2 | 2.6 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.4 | 0.7 | 1.0 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | --- | -6.16 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=12V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=12V , VGS=0V , TJ=55 | --- | --- | 5 | uA |
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=20A | --- | 3.5 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.5 | --- | |
| Qg | Total Gate Charge (4.5V) | VDS=6V , VGS=10V , ID=20A | --- | 37 | --- | nC |
| Qgs | Gate-Source Charge | --- | 4.5 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 2 | --- | nC | |
| td(on) | Turn-On Delay Time | VDD=6V , VGS=4.5V , RG=3.3, ID=20A | --- | 21 | --- | ns |
| tr | Rise Time | --- | 45 | --- | ns | |
| td(off) | Turn-Off Delay Time | --- | 79 | --- | ns | |
| tf | Fall Time | --- | 23 | --- | ns | |
| Ciss | Input Capacitance | VDS=6V , VGS=0V , f=1MHz | --- | 5050 | --- | pF |
| Coss | Output Capacitance | --- | 1060 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 940 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 100 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | 400 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=20A , TJ=25 | --- | --- | 1.0 | V |
| trr | Reverse Recovery Time | IF=20A , dI/dt=100A/µs , TJ=25 | --- | 18 | --- | ns |
| Qrr | Reverse Recovery Charge | --- | 5 | --- | nC | |
| Part Number | Package Code | Packaging | |
|---|---|---|---|
| HSBB1260 | PRPAK3*3 | 3000/Tape&Reel |
2411061706_HUASHUO-HSBB1260_C42376793.pdf
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