Compact SOT523 NPN Transistor High Diode MMBT3904T Ideal for Amplification and Switching Circuits
Key Attributes
Model Number:
MMBT3904T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904T
Package:
SOT-523
Product Description
Product Overview
The MMBT3904T is a high diode semiconductor transistor in a SOT-523 plastic-encapsulated package. It is an NPN transistor complementary to the MMBT3906T and offers a small package size. This transistor is suitable for various electronic applications requiring reliable switching and amplification.
Product Attributes
- Brand: H igh Diode Semiconductor
- Package Type: SOT-523
- Complementary to: MMBT3906T
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | V CBO | 60 | V | |||
| Collector-Emitter Voltage | V CEO | 40 | V | |||
| Emitter-Base Voltage | V EBO | 6 | V | |||
| Collector Current | I C | 0.2 | A | |||
| Collector Power Dissipation | P C | 0.15 | W | |||
| Thermal Resistance Junction To Ambient | R JA | 833 | /W | |||
| Junction Temperature | T j | 150 | ||||
| Storage Temperature | T stg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=10A, IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V | ||
| Collector cut-off current | I CEX | VCE=30V, VEB(off)=3V | 50 | nA | ||
| Emitter cut-off current | I EBO | VEB=5V, IC=0 | 100 | nA | ||
| DC current gain | hFE | VCE=1V, IC=0.1mA | 40 | |||
| VCE=1V, IC=1mA | 70 | |||||
| VCE=1V, IC=10mA | 100 | 300 | ||||
| VCE=1V, IC=50mA | 60 | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC=10mA, IB=1mA | 0.2 | V | ||
| IC=50mA, IB=5mA | 0.3 | V | ||||
| Base-emitter saturation voltage | VBE(sat) | IC=10mA, IB=1mA | 0.65 | 0.85 | V | |
| IC=50mA, IB=5mA | 0.95 | V | ||||
| Transition frequency | fT | VCE=20V,IC=10mA, f=100MHz | 300 | MHz | ||
| Collector output capacitance | Cob | VCB=5V, IE=0, f=1MHz | 4 | pF | ||
| Base input capacitance | Cib | VEB=0.5V, IC=0, f=1MHz | 8 | pF | ||
| Delay time | td | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA | 35 | ns | ||
| Rise time | tr | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA | 35 | ns | ||
| Storage time | ts | VCC=3V, IC=10mA, IB1= IB2=1mA | 200 | ns | ||
| Fall time | tf | VCC=3V, IC=10mA, IB1= IB2=1mA | 50 | ns |
2410121331_High-Diode-MMBT3904T_C22458629.pdf
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