power MOSFET Hangzhou Silan Microelectronics SVF4N90F for DC DC converters and PWM motor driver circuits
Key Attributes
Model Number:
SVF4N90F
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
4A
RDS(on):
2.7Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3pF
Number:
1 N-channel
Output Capacitance(Coss):
68pF
Input Capacitance(Ciss):
707pF
Pd - Power Dissipation:
44W
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
SVF4N90F
Package:
TO-220F
Product Description
Product Overview
The SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field-effect transistor manufactured using Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high-energy pulse withstand capability in avalanche and commutation modes. It is widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: Hangzhou, China
- Certifications: Pb free, Halogen free (depending on part number)
Technical Specifications
| Part Number | Package | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID) @ TC=25C | RDS(on)(typ.) @ VGS=10V | Power Dissipation (PD) @ TC=25C | Avalanche Energy (EAS) | Thermal Resistance (RJC) | Thermal Resistance (RJA) | Ordering Information |
| SVF4N90F | TO-220F-3L | 900V | 30V | 4A | 2.7 | 44W | 344mJ (L=30mH) | 2.84C/W | 62.5C/W | SVF4N90F, Pb free, Tube |
| SVF4N90MJ | TO-251J-3L | 900V | 30V | 4A | 2.7 | 132W | 84mJ (L=10mH) | 0.95C/W | 62.0C/W | SVF4N90MJ, Halogen free, Tube |
| SVF4N90T | TO-220-3L | 900V | 30V | 4A | 2.7 | 150W | 84mJ (L=10mH) | 0.83C/W | 62.0C/W | SVF4N90T, Pb free, Tube |
| SVF4N90DTR | TO-252-2L | 900V | 30V | 4A | 2.7 | 132W | 84mJ (L=10mH) | 0.95C/W | 62.0C/W | SVF4N90D, Halogen free, Tape&Reel |
Electrical Characteristics (Tj=25C unless otherwise noted)
| Characteristic | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 900 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=900V, VGS=0V | -- | -- | 1.0 | A |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain-Source On State Resistance | RDS(on) | VGS=10V, ID=2A | -- | 2.7 | 3.5 | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | -- | 707 | -- | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | -- | 68 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | -- | 3.0 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=450V, ID=4A,RG=25 | -- | 15 | -- | ns |
| Turn-on Rise Time | tr | VDD=450V, ID=4A,RG=25 | -- | 26 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=450V, ID=4A,RG=25 | -- | 39 | -- | ns |
| Turn-off Fall Time | tf | VDD=450V, ID=4A,RG=25 | -- | 28 | -- | ns |
| Total Gate Charge | Qg | VDS=720V, ID=4A,VGS=10V | -- | 17 | -- | nC |
| Gate-Source Charge | Qgs | VDS=720V, ID=4A,VGS=10V | -- | 4.1 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=720V, ID=4A,VGS=10V | -- | 7.6 | -- | nC |
Source-Drain Diode Ratings and Characteristics
| Characteristic | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Continuous Source Current | IS | -- | -- | -- | 4 | A |
| Pulsed Source Current | ISM | -- | -- | -- | 16 | A |
| Diode Forward Voltage | VSD | IS=4A, VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | Trr | IS=4A, VGS=0V, dIF/dt=100A/s | -- | 535 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=4A, VGS=0V, dIF/dt=100A/s | -- | 2.5 | -- | C |
2501091111_Hangzhou-Silan-Microelectronics-SVF4N90F_C5180446.pdf
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