Switching transistor High Diode MMBT4401 semiconductor NPN type in compact SOT23 package for general
Key Attributes
Model Number:
MMBT4401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT4401
Package:
SOT-23
Product Description
Product Overview
The MMBT4401 is a high diode semiconductor NPN switching transistor in a SOT-23 package. It is designed for general-purpose switching applications.
Product Attributes
- Brand: High Diode Semiconductor
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A ,IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=50V,IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEX | VCE=35V, VEB=0.4V | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 0.1 | A | ||
| DC current gain | hFE1 | VCE=1V, IC=0.1mA | 20 | |||
| hFE2 | VCE=1V, IC=1mA | 40 | ||||
| hFE3 | VCE=1V, IC=10mA | 80 | ||||
| hFE4 | VCE=1V, IC=150mA | 100 | 300 | |||
| hFE5 | VCE=2V, IC=500mA | 40 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=150mA,IB=15mA | 0.4 | V | ||
| VCE(sat) | IC=500mA,IB=50mA | 0.75 | V | |||
| Base-emitter saturation voltage | VBE(sat | IC=150mA,IB=15mA | 0.95 | V | ||
| VBE(sat | IC=500mA,IB=50mA | 1.2 | V | |||
| Transition frequency | fT | VCE=10V, IC=20mA,f =100MHz | 250 | MHz | ||
| Delay time | td | VCC=30V, VBE(off)=-2V IC=150mA , IB1=15mA | 15 | ns | ||
| Rise time | tr | 20 | ns | |||
| Storage time | ts | VCC=30V, IC=150mA IB1=IB2=15mA | 225 | ns | ||
| Fall time | tf | 60 | ns | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Thermal Resistance Junction To Ambient | RJA | 417 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 |
2410121341_High-Diode-MMBT4401_C466634.pdf
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