Power MOSFET Hangzhou Silan Microelectronics SVF7N60F for in High Voltage AC DC Power Supply Systems
Product Overview
The SVF7N60F/S/D is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology ensures minimal on-state resistance, superior switching performance, and enhanced robustness against high energy pulses in avalanche and commutation modes. It is widely adopted in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free, Halogen free
Technical Specifications
| Part Number | Package | 7A, 600V, RDS(on) typ | VDS (V) | VGS (V) | ID @ TC=25C (A) | ID @ TC=100C (A) | IDM (A) | PD @ TC=25C (W) | EAS (mJ) | TJ Range (C) | RJC (C/W) | RJA (C/W) | BVDSS (V) | IDSS (A) | IGSS (nA) | VGS(th) (V) | RDS(on) @ VGS=10V, ID=3.5A () | Ciss (pF) | Coss (pF) | Crss (pF) | td(on) (ns) | tr (ns) | td(off) (ns) | tf (ns) | Qg (nC) | Qgs (nC) | Qgd (nC) | IS (A) | ISM (A) | VSD @ IS=7.0A (V) | Trr (ns) | Qrr (C) |
| SVF7N60F | TO-220F-3L | 0.96 | 600 | 30 | 7.0 | 4.0 | 28 | 45 | 490 | -55+150 | 2.78 | 62.5 | 600 | 1.0 | 100 | 2.0 - 4.0 | 0.96 | 592-1001 | 96 | 8.7 | 15.5 | 32.7 | 52.2 | 31.5 | 21.1 | 4.53 | 10.0 | 7.0 | 28 | 1.4 | 482 | 2.9 |
| SVF7N60S | TO-263-2L | 0.96 | 600 | 30 | 7.0 | 4.0 | 28 | 122 | 490 | -55+150 | 1.02 | 62.5 | 600 | 1.0 | 100 | 2.0 - 4.0 | 0.96 | 592-1001 | 96 | 8.7 | 15.5 | 32.7 | 52.2 | 31.5 | 21.1 | 4.53 | 10.0 | 7.0 | 28 | 1.4 | 482 | 2.9 |
| SVF7N60D | TO-252-2L | 0.96 | 600 | 30 | 7.0 | 4.0 | 28 | 90 | 490 | -55+150 | 1.39 | 62.0 | 600 | 1.0 | 100 | 2.0 - 4.0 | 0.96 | 592-1001 | 96 | 8.7 | 15.5 | 32.7 | 52.2 | 31.5 | 21.1 | 4.53 | 10.0 | 7.0 | 28 | 1.4 | 482 | 2.9 |
2501091110_Hangzhou-Silan-Microelectronics-SVF7N60F_C30446.pdf
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