Power MOSFET Hangzhou Silan Microelectronics SVF13N50F N Channel Device for Switching Power Supplies
Key Attributes
Model Number:
SVF13N50F
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
520mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.76pF
Number:
1 N-channel
Output Capacitance(Coss):
183pF
Input Capacitance(Ciss):
1.436nF
Pd - Power Dissipation:
51W
Gate Charge(Qg):
23.83nC@10V
Mfr. Part #:
SVF13N50F
Package:
TO-220F-3
Product Description
Product Description
The SVF13N50T/F/FG/PN is an N-channel enhanced high-voltage power MOS field-effect transistor manufactured using Silan's F-CellTM planar high-voltage VDMOS process technology. Its advanced process and strip cell design structure provide low on-resistance, excellent switching performance, and high avalanche breakdown capability. This product is widely applicable in AC-DC switching power supplies, DC-DC converters, and high-voltage H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: Hangzhou, China
- Certifications: Lead-free, Halogen-free (for FG variant)
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | SVF13N50T | SVF13N50F(G) | SVF13N50PN | Unit | |
| Absolute Maximum Ratings (TC=25C unless otherwise specified) | ||||||
| Drain-Source Voltage | VDS | 500 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Drain Current (TC=25C) | ID | 13 | A | |||
| Drain Current (TC=100C) | ID | 10 | A | |||
| Drain Pulse Current | IDM | 52 | A | |||
| Power Dissipation (TC=25C) | PD | 1.52 | 0.41 | 1.74 | W | |
| Power Dissipation (TC>25C, derate per C) | PD | 1.52 | W | |||
| Single Pulsed Avalanche Energy (Note 1) | EAS | 823.75 | mJ | |||
| Operating Junction Temperature Range | TJ | -55+150 | C | |||
| Storage Temperature Range | Tstg | -55+150 | C | |||
| Thermal Characteristics | ||||||
| Chip to Case Thermal Resistance | RJC | 0.66 | 2.45 | 0.57 | C/W | |
| Chip to Ambient Thermal Resistance | RJA | 62.5 | 120 | 50 | C/W | |
| Electrical Characteristics (TC=25C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 500 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=500V, VGS=0V | 1 | A | ||
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250A | 2.0 -- 4.0 | V | ||
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=6.5A | 0.44 -- 0.52 | |||
| Input Capacitance | Ciss | VGS=0V, f=1.0MHz | 1436 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | 183 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | 4.76 | pF | ||
| Turn-on Delay Time | td(on) | VDD=250V, ID=13A, RG=4.7, VGS=10V (Note 2, 3) | 37.33 | ns | ||
| Turn-on Rise Time | tr | VDD=250V, ID=13A, RG=4.7, VGS=10V (Note 2, 3) | 76.67 | ns | ||
| Turn-off Delay Time | td(off) | VDD=250V, ID=13A, RG=4.7, VGS=10V (Note 2, 3) | 79.67 | ns | ||
| Turn-off Fall Time | tf | VDD=250V, ID=13A, RG=4.7, VGS=10V (Note 2, 3) | 54.00 | ns | ||
| Total Gate Charge | Qg | VDS=400V, ID=13A, VGS=10V (Note 2, 3) | 23.83 | nC | ||
| Gate-Source Charge | Qgs | VDS=400V, ID=13A, VGS=10V (Note 2, 3) | 7.79 | nC | ||
| Gate-Drain Charge | Qgd | VDS=400V, ID=13A, VGS=10V (Note 2, 3) | 7.86 | nC | ||
| Source-Drain Diode Characteristics | ||||||
| Source Current | IS | -- | 13 | A | ||
| Pulsed Source Current | ISM | -- | 52 | A | ||
| Source-Drain Diode Forward Voltage | VSD | IS=13A, VGS=0V | -- -- 1.3 | V | ||
| Reverse Recovery Time | Trr | IS=13A, VGS=0V, dIF/dt=100A/S (Note 2) | 537.44 | ns | ||
| Reverse Recovery Charge | Qrr | IS=13A, VGS=0V, dIF/dt=100A/S (Note 2) | 5.22 | C | ||
2511110935_Hangzhou-Silan-Microelectronics-SVF13N50F_C403817.pdf
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